ITTO薄膜的耐腐蚀稳定性和表面能研究  

Corrosion Resistance Stability and Surface Energy of Indium Tin Tantalum Oxide Films

作　　者：张波[1] 邵汉良 赵培[3] ZHANG Bo SHAO Han-liang ZHAO Pei(Changzhou Institute of Mechatronic Technology, Changzhou 213164, China Changzhou Zhongke Changtai Plasma Technology Company Ltd., Changzhou 213032, China Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China)

机构地区：[1]常州机电职业技术学院,江苏常州213164 [2]常州中科常泰等离子体技术有限公司,江苏常州213032 [3]中国科学院上海技术物理研究所,上海200083

出　　处：《材料保护》2017年第3期29-33,61,共6页Materials Protection

基　　金：江苏省自然科学基金项目(BK20161201);常州市应用基础研究项目(CE20152007);江苏高校品牌专业建设工程资助项目(PPZY2015B187);江苏高校"青蓝工程"中青年学术带头人培养资助项目(2016)

摘　　要：为了提高透明导电薄膜的综合性能,采用磁控溅射法制备了Ta掺杂ITO(ITTO)薄膜,对薄膜在不同模拟环境介质溶液中的电学稳定性及电化学行为进行了测试,分析了处于特定介质环境中薄膜的相对电阻变化和表面形貌;基于薄膜表面接触角的测量,计算了薄膜的表面能和极性度。结果表明:薄膜在各环境介质中都发生了自钝化现象,ITTO薄膜显示了较好的化学稳定性和热稳定性,除了晶体结构的影响之外,稳定性较好的氧化钽也提高了薄膜的化学稳定性和热稳定性;掺杂使得薄膜的接触角减小,表面能增大,表面极性度增加,薄膜的表面状态和靠近费米能级处引入d轨道的活性高价原子的存在是促进表面能提高的主要原因。In order to improve the comprehensive property of films, tantalum-doped indium tin oxide （ITYO） films were deposited by magnetron sputtering technique, and the stability of electrical properties and electrochemical behaviors were tested in various simulated environment. The relative resistance changes of films in the special medium environments and the morphology of the film surface were analyzed. Moreover, based on the measurements of the contact angles, the surface energy and surface polarity of the films were calculated. Results showed that the self-passivation phenomenon of films occurred in the all of environment mediums, and the ITYO films exhibited more excellent chemical and thermal stability. Apart from the influence of crystal structure, the tantalum oxide with better stability could improve the chemical and thermal stability of the films. The doping declined the contact angle, increased surface energy and enhanced surface polarity. The surface condition and the existence of active high-valence atom with d-orbital states close to Fermi lever were the main cause which contributed to the improvement of surface energy.

关 键 词：Ta掺杂ITO薄膜 磁控溅射 化学稳定性 电化学行为 接触角 表面能 

分 类 号：O484[理学—固体物理]