MBE技术蓝宝石衬底上生长VO_2薄膜及其太赫兹和金属–绝缘体相变特性研究（英文）  

Terahertz and Metal-insulator Transition Properties of VO_2 Film Grown on Sapphire Substrate with MBE

作　　者：孙洪君[1] 王敏焕 边继明[1,2] 苗丽华[1] 章俞之[2] 骆英民[1] 

机构地区：[1]大连理工大学三束材料改性教育部重点实验室,物理与光电工程学院,大连116024 [2]中国科学院上海硅酸盐研究所中国科学院特种无机涂层重点实验室,上海200050

出　　处：《无机材料学报》2017年第4期437-442,共6页Journal of Inorganic Materials

基　　金：Fundamental Research Funds for the Central Universities(DUT16LAB11);Opening Project of Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences(KLICM-2014-01)

摘　　要：采用分子束外延(MBE)技术在单晶蓝宝石衬底上生长了高质量化学计量比二氧化钒(VO_2)薄膜,通过该技术实现薄膜厚度15~60 nm精确控制。对于优化条件下VO_2薄膜,实现了电阻率变化超过4个数量级的优异金属–绝缘体相变,近似于之前报道高质量单晶VO_2相变特性。特别是通过太赫兹时域光谱分析了不同厚度的VO_2薄膜在太赫兹波段的光学特性。结果表明:VO_2薄膜的厚度对其在太赫兹波段的光学特性有很大影响。因此,为了获得更优的可靠性和重复性能,VO_2薄膜的厚度必须得到精确控制。本研究结果对于下一步VO_2基太赫兹器件研究具有重要意义。High quality stoichiometric VO2 films were grown on single crystal sapphire substrates by molecular beam epitaxy（MBE）,the film thicknesses were precisely controlled on the nanoscale ranging from 15 nm to 60 nm.For the optimized sample,a distinct reversible metal-insulator transition（MIT）with abrupt resistance change more than four orders of magnitude was observed,which was comparable to the ever reported result for high quality single crystal VO2.Especially,the optical properties in the terahertz（THz）frequency range were characterized with THz time-domain spectroscopy（THz-TDs）measurements for samples with various thicknesses,and the results indicate that the THz properties of VO2 film was significantly affected by the thickness.Therefore,the thickness should to be precisely controlled to obtain reproducible and reliable performance.The THz devices based on VO2 film may benefit significantly from these achievements.

关 键 词：二氧化钒薄膜 太赫兹时域光谱 分子束外延 金属–绝缘体相变 

分 类 号：TB34[一般工业技术—材料科学与工程]