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机构地区:[1]吉林大学集成光电子学国家重点联合实验室吉林大学实验区,吉林长春130012 [2]西安交通大学机械工程学院,陕西西安710049
出 处:《中国激光》2017年第4期69-74,共6页Chinese Journal of Lasers
基 金:国家自然科学基金(91423102;91323301;61605055;21473076)
摘 要:液相脉冲激光烧蚀法(PLAL)具有绿色环保、适用范围广及可制备复合材料等优点,受到学术界的广泛关注,但是较低的制备效率限制了它进一步发展。将微流控技术与液相脉冲激光烧蚀法相结合,在硅基微流控芯片中实现了快速高效制备晶格型(400~800nm)和球型(100~300nm)硅纳米结构。通过扫描电子显微镜和光谱仪对其形貌结构及分布情况进行了测试表征,获得了微流控流速、激光烧蚀功率与纳米粒子制备效率之间的关系。该方法将液相脉冲激光烧蚀法的最高制备效率提高了30%以上,达到87.5mg/min,为将来液相脉冲激光烧蚀法工业化生产提供一种新的技术路线。Pulsed laser ablation in liquid (PLAL) has attracted significant interest in the academic community for its remarkable characteristics of environment protection, wide application range and capable for composite material preparation. But the relative lower preparation rate of PLAL prevents it from further development. Silicon nanostructures with lattice (400 - 800 nm) and spherical (100 - 300 nm) patterns on microfluidic chip with promoted production rate is achieved by combining microfluidic technology and PLAL. The morphology structure and distribution are characterized by scanning electron microscope anti spectrometer. The relationships between preparation rate of nanoparticles and microfluidic flow velocity as well as laser ablation power are obtained. The maximum preparation rate of PLAL enhances by 30%, up to 87.5 mg/min by the proposed method. Which provides a new technique route of PLAL industrial production.
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