射频磁控溅射AlN薄膜的场发射性能研究  

Field Emission Properties of AlN Thin Films Prepared by RF Magnetron Sputtering

作　　者：吴成泽[1] 汪剑波[1] 龚楠[1] 冯禹[1] 连宇翔[1] 孙贯成[1] 于淼[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2017年第1期43-46,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金(61405189);吉林省教育厅科技项目(2013-378);大学生创新创业训练计划项目(2013S010);吉林省科技计划项目(自然科学基金项目)(20150101019JC)

摘　　要：氮化铝(Al N)是一种宽禁带深紫外半导体材料,其良好的性能可作为紫外固态光源。采用射频磁控溅射法,在p型Si(100)衬底上制备了Al N薄膜。通过X射线衍射分析(XRD)、紫外-可见光光谱(UV-Vis)、场发射测试对制备的Al N薄膜进行了测试分析,针对薄膜生长特性对光吸收的影响及其场发射性能进行了研究。结果显示:在Si衬底上成功的制备了高度(002)取向的Al N薄膜,薄膜在230~250nm间有强紫外吸收,阈值电场为6.39V/μm。场发射测试结果表明,磁控溅射法制备的Al N薄膜具备良好的场发射性。AlN is a wide band gap deep ultraviolet semiconductor material, its good performance can be used as a sol- id-state ultraviolet light source. AlN thin films were deposited on Si （100） substrate by RF magnetron sputtering. The sample was characterized by means of X ray diffraction （XRD）, ultraviolet visible spectroscopy （UV-Vis） and field emission test, the effect of growth characteristics on the absorption of light and its field emission properties were inves- tigated. The results show that a high （002） AlN films were successfully deposited on the Si substrate, it has strong absorption at 230-250nm and the threshold electric field is 6.39V/μm. The field emission test results show that the prepared AlN films have good field emission properties.

关 键 词：磁控溅射 AL N薄膜 禁带宽度 场发射性 

分 类 号：O469[理学—凝聚态物理]