Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs  

作　　者：邸绍岩 沈磊 伦志远 常鹏鹰 赵凯 卢朓 杜刚 刘晓彦 

机构地区：[1]Institute of Microelectronics,Peking University [2]School of Information and Communication,Beijing Information Science and Technology University [3]CAPT,HEDPS,IFSA Collaborative Innovation Center of Ministry of Education,LMAM & School of Mathematical Sciences,Peking University

出　　处：《Chinese Physics B》2017年第4期383-387,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61674008,61421005,and 61404005)

摘　　要：The performance of double gate GaSb nMOSFETs with surface orientations of（100） and（111） are compared by deterministically solving the time-dependent Boltzmann transport equation（BTE）.Results show that the on-state current of the device with（111） surface orientation is almost three times larger than the（100） case due to the higher injection velocity.Moreover,the scattering rate of the（111） device is slightly lower than that of the（100） device.The performance of double gate GaSb nMOSFETs with surface orientations of（100） and（111） are compared by deterministically solving the time-dependent Boltzmann transport equation（BTE）.Results show that the on-state current of the device with（111） surface orientation is almost three times larger than the（100） case due to the higher injection velocity.Moreover,the scattering rate of the（111） device is slightly lower than that of the（100） device.

关 键 词：Boltzmann transport equation GASB surface orientation double gate 

分 类 号：TN386[电子电信—物理电子学] TG172.82[金属学及工艺—金属表面处理]