Si肖特基二极管直流及高频建模  

DC and RF Modeling of Si Schottky Diodes

作　　者：刘江宜[1] 唐杨[1] 王丁[1] 王燕[1] 

机构地区：[1]清华大学微纳电子系,北京100084

出　　处：《电子器件》2017年第1期6-10,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61176034)

摘　　要：采用分段提参的方法,针对SMIC 130 nm CMOS工艺下CoSi_2-Si肖特基二极管的直流及高频特性建立统一模型。直流时除了热发射效应,也考虑了势垒不均匀效应、大注入效应及隧穿效应的影响。高频时,在直流特性基础上特别考虑了衬底以及金属寄生效应的影响。该模型直流拟合误差为1.26%,高频时在整个测试频段(1 GHz^67 GHz)内电阻、电容拟合误差分别为3.16%和2.25%。据我们所知,这是首次针对CoSi_2-Si肖特基二极管建立完整模型,考虑直流及高频特性并给出了相应的提参步骤。A unified model is proposed by piecewise parameter extraction method for CoSi2-Si Schottky diodes in SMIC 130nm CMOS process applicable to both DC and RF characteristics. For the DC characteristics, interfacial barrier inhomogeneity effect, high injection effect and tunneling effect are considered besides thermionic emission effect. Substrate parasitic effect and metal parasitic effect are specially taken into account in RF characteristics on the basis of the DC model. The DC fitting error of the model is 1.26%, and the average fitting errors of capacitance and resistance characteristics are respectively 3.16% and 2.25% in the whole frequency range（ 1 GHz-67 GHz）. To our knowledge,this is for the first time such a unified model for CoSi2-Si Schottky diode considering DC and RF charac- teristics together with corresponding extraction procedure is proposed.

关 键 词：肖特基二极管 直流及高频特性 分段提参 寄生效应 

分 类 号：TN311.8[电子电信—物理电子学]