简易化学水浴法制备SnO_2/p-Si异质结光电性能（英文）  

Optoelectronic properties of SnO_2/p-Si heterojunction prepared by a simple chemical bath deposition method

作　　者：何波[1,2,3] 徐静[4] 宁欢颇 赵磊[5] 邢怀中[1] 张建成[2] 秦玉明[6] 张磊 

机构地区：[1]东华大学应用物理系,上海201620 [2]广西大学机械工程学院广西制造系统与先进制造技术重点实验室,广西南宁530004 [3]华东理工大学超细材料制备与应用教育部重点实验室,上海200237 [4]上海大学分析测试中心,上海200444 [5]上海大学物理系,上海200444 [6]东华大学非线性科学研究所,上海201620 [7]上海微伏仪器科技有限公司,上海200072

出　　处：《红外与毫米波学报》2017年第2期139-143,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the Fund of Shanghai Alliance Project(LM201601);the Fund of the Key Laboratory for Ultrafine Materials of The Ministry of Education(15Q10932);the Fundamental Research Funds for the Central Universities,China(16D110916);National Natural Science Foundation of China(11672077)

摘　　要：通过一种简易化学水浴法将SnO_2薄膜沉积在晶硅衬底上以制备n-SnO_2/p-Si异质结光电器件,这种自制的化学水浴装置非常便宜和方便.采用XRD、SEM、XPS、PL、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO_2薄膜的微结构、光学和电学性能,对SnO_2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性.The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n- SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage （I-V） curve of SnO2/p-Si het- erojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light- driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained.

关 键 词：SNO2薄膜 化学水浴法 异质结 I-V曲线 

分 类 号：O4[理学—物理]