一种0.6V CMOS基准电压源的设计  

Design of a 0.6 V CMOS Voltage Reference Source

作　　者：胡云斌[1,2] 胡永贵[3] 周勇[2] 顾宇晴 陈振中[2] HU Yunbin HU Yonggui ZHOU Yong GU Yuqing CHEN Zhenzhong(Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp. , Chongqing 400060, P. R. China Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, P. R. China)

机构地区：[1]重庆邮电大学,重庆400065 [2]模拟集成电路重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2017年第2期160-163,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60906009);中国博士后科学基金资助项目(20090451423);重庆科委基金资助项目(CSTC2010AA2004)

摘　　要：基于低压技术,利用亚阈值区MOS管代替寄生BJT管,设计了一种工作在低电源电压下的基准电压源,并对基准电压进行了温度补偿。采用TSMC 0.18μm CMOS工艺对电路进行了设计和仿真。仿真结果显示:电路正常工作的最低电源电压为0.6V,当电源在0.6~2.0V范围内变化,基准输出电压仅变化了1.75mV;在0.6V电源电压下,-20℃~125℃温度范围内,温度系数为2.8×10^(-5)/℃,电源抑制比为52.47dB@10kHz,整个电路的功耗仅为12μW。Replacing the parasitic BJT with the MOSFET operating in sub-threshold region, a voltage reference source with low supply voltage was designed on the basis of low voltage technology. A temperature compensation circuit was also presented to achieve curvature correction. The complete circuit was designed in the TSMC 0.18 μm CMOS technology. Simulation results showed that the proposed circuit was capable of operating at a supply voltage down to 0.6 V. The reference voltage changed only 1.75 mV when the supply voltage varied from 0.6 V to 2.0 V. Under a 0.6 V supply, the temperature coefficient was 2.8 × 10^-5/℃ over a wide temperature range of --20 ℃- 125 ℃, and the PSRR was 52.47 dB at 10 kHz. The whole circuit consumed 12μW only.

关 键 词：低压基准电压源 CMOS 低压运放 衬底偏置 

分 类 号：TN432[电子电信—微电子学与固体电子学]