一种全MOS型超低功耗基准电压源设计  

Design of an All MOS Ultra-Low Power Voltage Reference

作　　者：周勇[1,2] 胡刚毅[1,3] 沈晓峰[2] 胡云斌[2] 顾宇晴 陈遐迩 ZHOU Yong HU Gangyi SHEN Xiaofeng HU Yunbin GU Yuqing CHEN Xiaer(Chongqing University, Chongqing 400044, P. R. China Sichuan Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, p. R. China Institute of Solid State Circuits, China Electronics Technology Group Corp. , Chongqing 400060, P. R. China)

机构地区：[1]重庆大学,重庆400044 [2]模拟集成电路重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2017年第2期164-167,共4页Microelectronics

摘　　要：在0.18μm标准CMOS工艺模型下,利用亚阈值MOS管以及深线性区MOS管的特性,设计了一种全MOS型基准电压源。该基准源不使用电阻,具有超低功耗、低温度系数的特点,并且可在电源电压低于1V的情况下正常工作。当电源电压为1.2V,温度范围为-55℃~125℃,该基准源的温度系数为2.67×10^(-5)/℃,电源抑制比为-45.42dB@100Hz,功耗为105.96nW。An all MOS voltage reference was designed in a 0.18μm standard CMOS process by using the properties of subthreshold MOSFET and deep-linear-area MOSFET.The proposed voltage reference didn＇t need resistors,so it consumed ultra-low power and had low temperature coefficient.In addition,it could work steadily under sub-1 V power supply.At 1.2 V power supply,its temperature coefficient was 2.67×10^-5/℃ in the operating temperature range of-55℃～125℃.The PSRR was-45.42dB@100Hz,and the power consumption was 105.96 nW.

关 键 词：全MOS带隙基准源 超低功耗 低温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]