Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors  

作　　者：Xiang-Mi Zhan Mei-Lan Ha Quan Wang Wei Li Hong-Ling Xiao Chun Feng Li-Juan Jiang Cui-Mei Wang Xiao-Liang Wang Zhan-Guo Wang 占香蜜;郝美兰;王权;李巍;肖红领;冯春;姜丽娟;王翠梅;王晓亮;王占国(Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;Department of Electro-mechanics,Handan College;School of Microelectronics, University of Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices)

机构地区：[1]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049 [3]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 [4]3 Department of Electro-mechanics, Handan College, Handan 05600

出　　处：《Chinese Physics Letters》2017年第4期75-78,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and2016YFB0400301;the National Natural Sciences Foundation of China under Grant No 61334002;the National Science and Technology Major Project

摘　　要：Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.

关 键 词：GAN In Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors 

分 类 号：TN32[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]