Influence of Poly（methyl metacrylate） Addition on Resistive Switching Performance of P3HT/P（VDF-TrFE） Blend Films  

PMMA掺杂对P3HT／P（VDF—TrFE）复合薄膜阻变性能影响研究

作　　者：翁军辉 胡静航 张剑驰 蒋玉龙[1] 朱国栋[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学微电子研究院,上海200433

出　　处：《Chinese Journal of Chemical Physics》2017年第2期200-206,I0002,共8页化学物理学报（英文）

基　　金：This work was supported by the STCSM （No.13NMI400600） and the National Natural Science Foundation of China （No.U1430106）.

摘　　要：Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.

关 键 词：Resistive switching Ferroelectric/semiconducting blend film Spin coating Phase separation 

分 类 号：O[理学]