This work was supported by the STCSM (No.13NMI400600) and the National Natural Science Foundation of China (No.U1430106).
Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usuall...
ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China (No.10804020), the Specialized Research Fund for the Doctoral Program of Higher Education of China (No.200802461088), and the Shanghai Leading Academic Discipline Project (No.B113).
We report the observation of asymmetric switching dual peaks in ferroelectric copolymer films. These dual peaks occurs when the poling electric field is just below the coercive field and can be removed by continuous a...