基板弯曲对P(VDF-TrFE)铁电薄膜电学性能的影响  

Bending effect on the electrical properties of ferroelectric P(VDF-TrFE) thin films

作　　者：顾寅[1] 朱国栋[1,2] 蒋玉龙[2] 曾韡[1] 

机构地区：[1]复旦大学材料科学系 [2]复旦大学微电子学院专用集成电路与系统国家重点实验室,上海200433

出　　处：《功能材料与器件学报》2011年第6期591-595,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(10804020;61076068);教育部博士点基金(200802461088);专用集成电路与系统国家重点实验室开放研究课题基金(10KF004)资助

摘　　要：近年来基于铁电聚合物的柔性存储器件的研制受到了越来越多的关注。铁电聚合物柔性应用的关键因素之一,在于基板弯对其电学性产生多大程度的影响,但迄今这方面的研究较少。本文研究了柔性基板弯曲对铁电聚合物薄膜电学性能的影响,通过对铁电电容结构的表征,确定了基板弯曲对铁电膜矫顽场、剩余极化、电学保持能力、电学疲劳特性和漏电流特性的影响。研究表明,在本文实验条件下基板不会对铁电聚合物的电学性能产生影响。In recent years flexible ferroelectric memories have attracted more and more attention due to their potential in flexible devices. However, less attention has been paid on the possible influence of the substrate bending on the electrical properties in ferroelectrie polymer thin films. Here we reported our study of the bending effect on electrical properties in ferroelectrie P（VDF- TrFE） films and determined the changes in the coercive field, remanent polarization, electrical retention, polarization fatigue and leakage property with the substrate bending. The experimental results showed that the bending would induce neglectable influence on electrical properties in ferroelectric polymer films.

关 键 词：铁电薄膜 P(VDF—TrFE) 柔性器件 容变存储 

分 类 号：TN304.9[电子电信—物理电子学]