MBE生长的Be掺杂GaAs结构和光学特性研究  

The structural and optical properties of Be-doped GaAs grown by MBE

作　　者：贾慧民[1] 唐吉龙[2] 常量 房丹[2] 方铉[2] 王晓华[2] 马晓辉[2] 徐莉[2] 魏志鹏[2] 

机构地区：[1]长春理工大学理学院高功率半导体激光国家重点实验室,吉林长春130022 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《纳米科技》2016年第1期1-5,共5页

摘　　要：本文报道了分子束外延（MBE）生长的Be掺杂GaAs，通过改变Be掺杂源的温度我们得到了不同掺杂浓度的GaAs样品。利用原子力显微镜（AFM）和霍尔测试仪分别对样品的表面形貌和电学特性进行表征。特别的，在低温和随温度变化的光致发光谱中，与Be受主相关的辐射被观察到，且随着掺杂浓度的增加与Be受主相关的辐射也相应地加强。In this paper, Be-doped GaAs were grown by molecular beam epitaxy （MBE）, by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be aeeeptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.

关 键 词：Be掺杂 砷化镓 分子束外延 光致发光 

分 类 号：TM53[电气工程—电器]