3300 V p^+深阱平面栅非穿通IGBT特性  

Characteristics of a 3 300 V Deep p^+ Well Planar Gate NPT-IGBT

作　　者：刘江 王耀华 赵哿 高明超 金锐 潘艳 

机构地区：[1]全球能源互联网研究院功率半导体研究所,北京102211 [2]先进输电技术国家重点实验室,北京102211

出　　处：《半导体技术》2017年第5期352-357,共6页Semiconductor Technology

基　　金：国家能源局资助项目(5455DW150019);国家电网自筹项目(5455GB160006)

摘　　要：高压绝缘栅双极晶体管(IGBT)存在寄生晶闸管,易发生闩锁失效。对p^+深阱的参数进行了优化,制备了3 300 V p^+深阱平面栅非穿通IGBT(NPT-IGBT)。对NPT-IGBT的静态特性进行了仿真,结果表明,当p^+结深约为5.5μm,p^+深阱距离多晶硅5μm时,p^+深阱并未影响到沟道处p阱掺杂浓度,对IGBT静态特性无明显影响。制备了不同p^+深阱注入剂量的IGBT芯片,并将芯片封装为模块,分别进行常温和高温下的静态和动态参数测试。测试结果表明,当p^+深阱剂量低时,常温下模块关断失效;而p^+深阱剂量增大时可通过常温、高温开关测试,并通过10μs短路测试。p^+深阱注入剂量对静态特性无明显影响,对动态特性改善明显,可满足应用要求。High voltage insulated gate bipolar transistor （IGBT） has a parasitic thyristor, which is prone to latch failure. The parameters of the deep p＋ well were optimized, and a 3 300 V deep p＋ well planar gate non-punch-through IGBT （NPT-IGBT） was fabricated. The static characteristics of the NPT- IGBT were simulated. The simulation results show that when the deep p＋ well depth is about 5.5 μm and the distance between the deep p＋ well and polycrystalline silicon is 5 μm, the deep p＋ well doesn＇t affect the doping concentration of the p well in the channel and has no obvious effect on static characteristics of IGBT. The chips of the IGBT with different p＋ deep well injection doses were prepared, and the chips were packaged as a module to test the static and dynamic parameters at room and high temperature, respectivly. The test results show that the module turns off failure at room temperature when the injection dose of the deep p＋ well is low. And when the injection dose of the deep p＋ well increases, the IGBT can pass switch tests at room and high temperature, and it can pass the 10 μs short circuit test. The injection dose of the deep p＋ well has no obvious effect on static characteristics but obviously improves dynamic characteristics, which can meet the application requirements.

关 键 词：非穿通绝缘栅双极晶体管(NPT-IGBT) p+深阱 静态特性 动态特性 闩锁 

分 类 号：TN322.8[电子电信—物理电子学]