双层有源层非晶铟镓锌氧化物薄膜晶体管的仿真  

Simulation of an Amorphous Indium-gallium-zinc-oxide Thin Film Transistor with Double Active Layers

作　　者：彭云霞[1] 潘东[1] 钟传杰[1] 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《固体电子学研究与进展》2017年第2期88-93,共6页Research & Progress of SSE

基　　金：国家自然基金资助项目(60776056)

摘　　要：采用SILVACO软件的ATLAS对双有源层非晶铟镓锌氧化物薄膜晶体管进行二维器件模拟,研究了在底栅顶接触的结构下,不同沟道厚度比的情况下的器件的电学特性。在IZO材料的厚度为5nm、IGZO材料的厚度为35nm时,器件的最佳开关电流比约为3.5×1013,亚阈值摆幅为0.36V/dec。并在此厚度比的基础上,模拟了两层材料的隙态密度,并通过改变态密度模型中的相关参数,观察两层材料对器件的电学特性的影响情况。In this paper,a bottom-gate-top-contact structure thin film transistor with double amorphous indium-gallium-zinc-oxide（a-IGZO）active layers was simulated by ATLAS 2Ddevice simulator of SILVACO.The electrical property of the device was studied under different thickness of each active layer.The best on/off current ratio（Ion/Ioff）≈3.5×10^13 and sub-threshold swing（SS）= 0.36V/dec are obtained when the thickness of IZO material is 5nm and IGZO is35 nm.On the basis of this condition,the density of states（DOS）model of both active layers was simulated.The effect of the two active layers on the electrical characteristics of the device was investigated by changing some related parameters of each layer in the DOS model.

关 键 词：非晶铟镓锌氧化物薄膜晶体管 器件模拟 态密度 

分 类 号：TN321.5[电子电信—物理电子学]