二氧化铈抛光液化学机械抛光微晶玻璃的机理及优化  

Mechanism and optimization of chemical-mechanically polishing ceramic glass substrate with CeO_2 slurry

作　　者：白林山[1] 王金普[1] 储向峰[1] 

机构地区：[1]安徽工业大学化学与化工学院,安徽马鞍山243002

出　　处：《金刚石与磨料磨具工程》2017年第2期1-5,10,共6页Diamond & Abrasives Engineering

基　　金：国家自然科学基金项目(50975002);教育部高校留学回国人员科研项目

摘　　要：以纳米CeO_2为磨料自制抛光液,研究磨料质量分数、pH值、抛光液流量、抛光盘转速、表面活性剂种类和氟化铵质量分数等因素对微晶玻璃化学机械抛光的影响,分析总结CeO_2在微晶玻璃化学机械抛光中的作用机理,利用原子力显微镜(AFM)检测微晶玻璃抛光后的表面粗糙度。结果表明:当CeO_2质量分数为3%、抛光液流量为25mL/min、抛光盘转速为100r/min、pH=8.0、十二烷基硫酸钠质量分数为0.01%,氟化铵质量分数为0.7%时,抛光后微晶玻璃表面粗糙度(Ra)最低为0.72nm,材料去除速率达到180.91nm/min。The effects of mass fraction of abrasive, pH value, flow rate of polishing slurry, rotate speed, surfactant types and mass fraction of NH4F on the material removal rate and the surface roughness of the ceramic glass substrate were investigated by CeO2 slurry. The surface roughness of e ceramic glass substrates after being polished was characterized by atomic force microscope. Results show that the material removal rate （MRR） could reach 180.91 nm/min and could reach 0.72 nm under the following conditions： the mass fraction of CeO2 slurry 25 mL/min, the rotate speed 100 r/min, pH=8.0, the mass fraction of e surface roughness , the flow auryl sodium 0.01%, the mass fraction of NH4F 0.70%.

关 键 词：二氧化铈 微晶玻璃 化学机械抛光 材料去除速率 

分 类 号：TG58[金属学及工艺—金属切削加工及机床]