三嗪对CVD石墨烯n型掺杂的研究  

Synthesis of the Nitrogen-doped CVD Graphene through Triazine

作　　者：刘颖[1,2] 戴丹[2] 江南[2] 

机构地区：[1]上海大学材料科学与工程学院,上海200072 [2]中国科学院宁波材料技术与工程研究所,宁波315201

出　　处：《无机材料学报》2017年第5期517-522,共6页Journal of Inorganic Materials

基　　金：浙江省自然科学基金(Q15E020007);宁波市自然科学基金(201501HJ-B01248);国际科技合作专项(S2015ZR1100)~~

摘　　要：以化学气相沉积(CVD)制备的单层石墨烯为原料,小分子三嗪为掺杂剂,采用吸附掺杂的方式,在低温下对石墨烯实现n型掺杂。利用拉曼光谱(Raman)、X射线光电子能谱分析(XPS)、原子力显微镜(AFM)、紫外分光光度计(UV)和霍尔效应测试仪(Hall)对样品的形貌、结构及电学性能进行表征。结果表明:该方法简单安全,能够对石墨烯实现均匀的n型掺杂,掺杂石墨烯的透光率达到95%。掺杂后石墨烯的特征峰G峰和2D峰向高波数移动。掺杂180 min后,载流子浓度达到4×10^(12)/cm^2,接近掺杂前的载流子浓度,掺杂后的石墨烯在450℃的退火温度下具有可逆能力,其表面电阻在300℃以下具有较好的稳定性。Nitrogen-doped graphene （N-graphene） was prepared via molecular doping from symTriazine molecules at low temperature. The phase structure, morphology and electrical property were characterized by Raman spectroscopy （Raman）, X-ray photoelectron spectroscope（XPS）, atomic force microscope （AFM）, ultraviolet spectrophotometer（UV）, and Hall tester. Here the method provides a simple and safe process to grow N-graphene. The morphology of N-graphene retains good uniformity, and the transmittance of the graphene is 95% in the range from 300 nm to 800 nm. The typical graphene peaks G-band and 2D-band both upshift after doping. The hole-carrier concentration is decreased immediately after Triazine decoration. After exposure to Triazine for 3 h, the charge-carrier concentration of N-graphene remains as high as 4×1012/cm2, which approaching the pristine Chemical Vapor Deposition （CVD） graphene’s carrier concentration due to the abundant molecular doping. After N-graphene annealed at 450℃, a hole-carrier concentration of ~8×1012/cm2 can be regenerated. The sheet resistance of N-graphene can stay steady at 300℃. The mechanism of Triazine doping is that Triazine is an electron-rich aromatic molecule due to the incorporation of N atoms in the aromatic ring, and some negative charges are expected to transfer onto the graphene. This research provides a simple method to obtain N-graphene doping for future application in electrical devices.

关 键 词：CVD石墨烯 三嗪 N型掺杂 载流子浓度 表面电阻 

分 类 号：TB321[一般工业技术—材料科学与工程]