晶种诱导电化学沉积法制备AZO薄膜  

Preparation of AZO thin films by seed-induced electrochemical deposition method

作　　者：刘洋[1] 刘贵山[1] 郭文明[1] 王勇兵[1] 马铁成[1] 

机构地区：[1]大连工业大学新材料与材料改性省高校重点实验室,辽宁大连116034

出　　处：《大连工业大学学报》2017年第2期134-138,共5页Journal of Dalian Polytechnic University

基　　金：大连市建委资助项目(2012-456)

摘　　要：通过晶种诱导辅助电化学沉积法制备Al掺杂ZnO薄膜(AZO),利用XRD和SEM对薄膜的物相和形貌进行了表征,紫外-可见分光光度计和四探针式方阻仪分析了薄膜的光电性能,研究了不同Al掺杂浓度下AZO薄膜的晶体结构和光电性能。研究表明,一定含量的Al元素掺杂并不影响晶体的结构类型;制备的AZO薄膜均为六方纤锌矿结构,且掺杂后薄膜的电阻呈数量级下降;当Al ^(3+)掺杂浓度为0.005mol/L时,AZO薄膜的结晶性最好,薄膜均匀致密,方块电阻为0.85kΩ,光透过率达85%,禁带宽度为3.37eV。AZO films were prepared via seed-induced electrochemical deposition method in zinc nitrate solution, and their crystal phase and micromorphology were characterized by X ray diffraction （XRD） and scanning electron microscopy （SEM）. UV-Vis and four-point probe method were used to characterize the structures and properties in different concentrations of aluminum nitrate. The results showed that the doping amount of aluminum had no effect on ZnO crystal; AZO thin films possessed a hexagonal wurtzite structure, and the resistivity was declined in order of magnitudes after Al-doped. AZO thin films prepared in 0. 005 mol/L doping concentration of AP＋ in zinc nitrate solution were deposited with well-crystallinity property, uniform and compact. The square resistance is 0.85 kΩ, the light transmittance is up to 85 % and the band-gap is about 3.37 eV.

关 键 词：晶种诱导 电沉积 掺杂 AZO薄膜 

分 类 号：TM914.4[电气工程—电力电子与电力传动]