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作 者:李星辰[1] 徐立君[1] 张鹏波[1] 吴强[1] 蔡鹏程[1] 汤磊 LI Xingchen XU Lijun ZHANG Pengbo WU Qiang CAI Pengchen TANG Lei(School of Science, Changchun University of Science and Technology, Changchun 130022 ChinaAcademy of Machinery Equipment R&D, Beijing 100089)
机构地区:[1]长春理工大学理学院,长春130022 [2]中国机械装备研究院,北京100089
出 处:《长春理工大学学报(自然科学版)》2017年第2期10-13,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)
摘 要:为研究高重频皮秒脉冲激光对多晶硅的损伤特性,用不同重复频率的皮秒脉冲激光辐照多晶硅,用扫描电子显微镜对激光辐照后多晶硅的损伤形貌进行检测。探究了高重频皮秒脉冲激光与多晶硅相互作用的机理,得到了不同辐照时间和重频的皮秒激光对多晶硅的损伤规律。研究表明:多晶硅的损伤阈值随着皮秒激光重频的增加逐渐降低,当激光重频大于5k Hz时,多晶硅的损伤阈值达到一个"饱和"值,损伤阈值几乎不再随着重频的增加而发生变化。研究结果对低脉冲能量高重复频率激光加工具有借鉴意义。In order to obtain Polysilicon damage characteristics irradiated by high repetition frequency picosecond laser, polysilicon was irradiated by different repetition frequencies pulsed laser. The surface ablation morphology of Polysilicon was observed by SEM. The physical mechanism of damage was explored. The impact of irradiation time and repetition frequency on damage threshold was analyzed. The experimental results showed that the damage threshold was increased with the increasing laser repetition rate. When the repetition frequency is more than 5kHz,the damage threshold is al-most constant with the increasing laser repetition rate. The study results might be useful for laser processing with low pulse energy and high repetition rate to increase the processing efficiency.
分 类 号:TN248[电子电信—物理电子学]
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