基于QFN封装的X波段GaAs T/R套片设计  

Designed of A Suit of X-band GaAs T/R Chips Based on QFN Package

作　　者：谢媛媛[1] 贾玉伟[1] 方家兴[1] 曾志[1] 周鑫[1] 赵子润 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《舰船电子对抗》2017年第2期99-105,共7页Shipboard Electronic Countermeasure

摘　　要：基于陶瓷方形扁平无引脚(QFN)封装研制出4款X波段GaAs微波单片集成电路(MMIC),包括GaAs幅相控制多功能芯片(MFC)、功率放大器、低噪声放大器、开关限幅多功能芯片。利用QFN技术将这套芯片封装在一起,组成2GHz带宽的QFN封装收/发(T/R)组件,输出功率大于1 W,封装尺寸为9mm×9mm×1mm。通过提高GaAs MMIC的集成度、放大器单边加电、内部端口匹配,创新性地实现了微波T/R组件的小型化。这几款芯片中最复杂的X波段幅相控制多功能芯片集成了T/R开关、六位数字移相器、五位数字衰减器、增益放大器及串转并驱动器。在工作频段内,收发状态下,增益大于5dB,1dB压缩输出功率(P-1)大于7dBm,移相均方根(RMS)误差小于2.5°,衰减均方根误差小于0.3dB,回波损耗小于-12dB,裸片尺寸为4.5mm×3.0mm×0.07mm。Based on ceramic quad flat non-lead lithic integrated circuits （MMICs） have been （QFN） package, four X-band GaAs microwave mono developed,which include GaAs amplitude-phase control multi-function chip （MFC）, power amplifier （PA） ,low noise amplifier （LNA） and switch-limiter MFC. The suit of chips can be packaged using QFN technology to build up a QFN-packaged transceiver/receiver （T/R） subassembly of 2 GHz bandwidth. For the T/R subassembly,the output power is higher than 1 W and the package size is 9 mm× 9 mm×1 mm. Microminiaturization of the microwave T/R subassembly has been realized by increasing the integration level of GaAs MMIC, changing the amplifier bias voltage to single side, matching the inside ports. The most com- plex chip among these MMICs is the X-band amplitude-phase control MFC, which is integrated with T/R switch, 6 bit digital phase shifter, 5 bit digital attenuator, gain amplifier and serial to parallel switch driver. In working frequency, in receiving and transmitting mode, the gain is higher than 5 dB and the 1 dB compressed output power （P-1） is higher than 7 dBm,the root mean square （RMS） errors of phase shift and amplitude are less than 2.5° and 0.3 dB,the echo loss is less than --12 dB,the die size is 4.5 mm×3.0 mm×0.07 mm.

关 键 词：陶瓷方形扁平无引脚封装 T/R X波段 GAAS微波单片集成电路 多功能芯片 

分 类 号：TN82[电子电信—信息与通信工程]