溶液法氧化物薄膜晶体管的印刷制备  

Oxide semiconductor thin film transistor device print fabrication based on solution method

作　　者：钟云肖 谢宇[1] 周尚雄 袁炜健 史沐杨 姚日晖[1] 宁洪龙[1] 徐苗[1] 王磊[1] 兰林锋[1] 彭俊彪[1] 

机构地区：[1]华南理工大学高分子光电材料与器件研究所发光材料与器件国家重点实验室材料科学与工程学院,广东广州510640

出　　处：《液晶与显示》2017年第6期443-454,共12页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金重大集成项目(No.U1601651);国家重点基础研究发展规划项目计划(No.2015CB655004);国家重点研发计划专项项目(No.2016YFB0401504;No.2016YFF0203603);广东省自然科学基金资助项目(2016A030313459);广东省科技计划项目(No.2014B090915004;No.2015B090914003;No.2016A040403037;No.2016B090907001;No.2016B090906002);中央高校基本科研业务费专项资金(No.2015ZP024;No.2015ZZ063)~~

摘　　要：溶液法印刷制备电子器件因具有绿色环保、低成本、流程简单、柔性好和适应性强等优良特性,受到世界各个国家的重视,尤其高性能薄膜晶体管是平板显示和消费电子行业的基石,更成为了研究的热点。本文综述了基于溶液法氧化物薄膜晶体管印刷制备的最新研究进展,详细讨论了印刷氧化物薄膜晶体管结构优化、半导体层材料、电极层材料和绝缘层材料以及相关前驱体选择等,指出了提升器件性能的关键,明确了器件后处理与稳定性的关系。最后,本文总结了氧化物薄膜晶体管在印刷制备和应用过程中存在的问题以及发展前景。In recent years, solution method for electronic device print fabrication has garnered increasing interest and attention due to their green, low-cost, simple process, flexible and good adaptive,particularly in high-performance oxide semiconductor thin film transistor in flat panel display and consumer electronics industries. This review reported latest progresses of print oxide semiconductor TFT including structure optimization, semiconductor layer material, electrode layer material, insulating layer material and associated precursor selection. The relationship between device stability and posttreatment is described clearly, and the key of performance promotion is found. Moreover, several personal insights on the existing challenges and future research direction of print oxide semiconductor TFT are considered based on current advances.

关 键 词：溶液法 氧化物薄膜晶体管 印刷制备 前驱体 后处理 

分 类 号：TN321.5[电子电信—物理电子学]