AlGaInAs多量子阱材料增益偏振相关性分析  

Theoretical Analysis of Gain Polarization Dependence of AlGaInAs Multiple Quantum Well

作　　者：孙然[1] 缪庆元[1] 何平安[1] 余文林 

机构地区：[1]武汉大学电子信息学院,湖北武汉430072 [2]中国通信服务华信设计院,浙江杭州310014

出　　处：《光学与光电技术》2017年第3期44-48,共5页Optics & Optoelectronic Technology

基　　金：国家自然科学基金(60877039)资助项目

摘　　要：考虑光场限制因子、温度变化和阱间载流子非均匀分布,给出AlGaInAs多量子阱增益求解的分析模型。对量子阱应变量、阱宽和载流子浓度对材料增益TE模和TM模的影响进行了分析。设计出C波段内增益低偏振相关的混合应变多量子阱结构。在15~45℃温度范围,其模式增益具有低的偏振相关性(2%以内);当注入载流子浓度从2×10^(24) m^(-3)增大到3×10^(24) m^(-3)时,模式增益逐渐增大,且能在一定温度下保持低的偏振相关(3%以内)。As A1GaInAs material system possess larger conduction band discontinuity, it has good temperature characteristic and is an ideal material of semiconductor lasers and semiconductor optical amplifiers, etc. In optical fiber communications, several factors influence the polarization states of signal light randomly. To acquire good operating performances in actual applications, it is necessary to make the gain insensitive to the polarization state when active region temperature changes. The theoretical model of gain of multiple quantum well （MQW） has been presented, which takes into account the optical confinement factor, temperature variation, as well as the nonuniform distribution of injected carrier in MQW. The influences of strain, well width and carrier concentration on the material gain of TE mode and TM mode of quantum well are analyzed. A mixed strain MQW with low polarization sensitivity of gain within C band has been designed. The polarization dependence of mode gain of the MQW maintains low level （below 2%） as temperature varies from 15 ℃ to 45 ℃. As the injected carrier concentration increases from 2×10^24m^-3 to 3 ×10^24m^-3, the mode gain increases gradually and keeps low polarization de- pendence （below 3%） in a certain temperature.

关 键 词：AlGaInAs多量子阱 增益 低偏振相关 温度 

分 类 号：TN248.4[电子电信—物理电子学]