低电容TVS二极管外延技术研究  

Study on Epitaxial Growth Process of Low Capacity TVS

作　　者：黄玉梅 史超 王海红 HUANG Yumei SHI Chao WANG Haihong(Advanced Semiconductor Manufacturing Corporation, Shanghai 201233, China.)

机构地区：[1]上海先进半导体制造股份有限公司,上海201233

出　　处：《集成电路应用》2017年第6期60-63,共4页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(15RJ0224)

摘　　要：低电容瞬态电压抑制器(TVS)是用来保护高频电路电压瞬变和浪涌防护的半导体器件,通过在重掺杂的P型掺硼衬底上生长近似本征的高阻N型外延层形成低电容导引二极管。高阻N型外延生长过程中的自掺杂现象特别严重,是产品量产面临的重大挑战。通过优化衬底背封工艺,采用外延缓冲层,结合高温烘烤,低温变速赶气等技术,从而在重掺杂P型衬底上生长出满足生产需要的高阻N型外延层,得到的器件电容及漏电均达到要求,产品良率达到98%以上。In the conventional manufacturing of low capacity TVS （Transient Voltage Suppressor） semiconductors （known for their use in circuit protection in the event of electrostatic discharge, quick transients, and electrical surges）, the low capacity diode of TVS device requires a layer of high resistivity N-type epitaxial layer to be deposited on a heavily doped P-type substrate. The deposition of this N-type layer presents a particular challenge with respect to aut-doping effect. In this paper, the auto-doping from P-type substrate was effectively suppressed through a combination of back sealing optimization, buffered Epitaxial layer growth, etc. In addition, a high temperature bake and low temperature periodic variable speed H2 purges were carried out before performing the high resistivity Epitaxial layer deposition. A high resistivity （〉150Q cm） N-type Epitaxial film was eventually deposited and the TVS device was successfully mass produced in an eight-inch production environment. Both the capacity and leakage of the TVS device meet the request.

关 键 词：TVS 自掺杂 高阻外延 扩展电阻剖面分析(SRP) 过渡区 

分 类 号：TN304.054[电子电信—物理电子学]