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作 者:刘士利[1] 王洋[1] 李承彬[1] 蔡国伟[1]
出 处:《高电压技术》2017年第6期2049-2054,共6页High Voltage Engineering
摘 要:特高压直流换流站阀厅金具表面场强的精确计算对于阀厅和金具的设计具有重要的指导意义,但由于阀厅内部设备众多、结构复杂,金具几何建模和表面电场数值求解存在较大困难。为准确计算阀厅金具表面场强,首先采用Pro/E建立了±800 kV阀厅金具的全尺寸模型,并通过ANSYS进行离散剖分;然后通过PSCAD仿真金具关键部位的瞬时电压分布,作为场计算的边界条件;最后采用伽辽金边界元法对阀厅金具表面电场进行数值分析,该方法大大降低了剖分难度和计算代价。计算结果表明,在该设计方案下,阀厅金具表面场强最大位置出现在低压端B相连接管母处,最大值为14.7 kV/cm,低于起晕场强限值。仿真结果为阀厅及金具设计提供了参考依据。Calculation for surface electric field intensity of UHVDC valve hall fittings is of important guiding significance for design of valve hall and fittings. Because of more interior equipment of valve hall and more complex structure, there is a big difficulty for geometric modeling and numerical solution of valve hall. To calculate the surface electric field intensity of each fittings in the valve hall accurately, first of all, we used Pro/E to create a full-size model for valve hall, and meshed by ANSYS, then made use of PSCAD to simulate ±800 kV UHVDC transmission system. Using instantaneous loading method of electrostatic field, we obtained the voltage value of key parts as the boundary condition of surface electric field intensity calculation. Finally, we calculated the surface electric field intensity of valve hall's fittings with Galerkin boundary element method. This method greatly reduced the meshing difficulty and calculating cost. The results show that the maximum field strength position of entire valve hall model appears in the position of phase B busbar connection at the side of low voltage for 14.7 kV/cm in this design, and does not produce corona phenomenon. The method and results of the simulation provide an important reference for design of valve hall fittings.
分 类 号:TM721.1[电气工程—电力系统及自动化]
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