非晶氧化物半导体薄膜晶体管沟道层的研究进展  

Research Progress on Channel Layers of the Amorphous Oxide Semiconductor Thin Film Transistors

作　　者：岳兰[1] 任达森[1] 罗胜耘[1] 陈家荣[1] 

机构地区：[1]贵州民族大学信息工程学院,贵阳550025

出　　处：《半导体技术》2017年第6期401-410,474,共11页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61504031);贵州省科学技术基金资助项目(黔科合LH字[2014]7388);贵州民族大学科研基金资助项目(15XRY009)

摘　　要：薄膜晶体管(TFT)作为开关元件广泛应用于平板显示领域,沟道层材料的选择直接影响了TFT的性能。近年来,基于非晶氧化物半导体(AOS)沟道层材料的TFT已成为具有潜力替代传统硅材料(非晶硅或多晶硅)沟道层TFT的新一代技术,有望应用于超大屏显示、3D显示、柔性显示以及透明显示等新一代显示领域。综述了AOS TFT沟道层的研究进展,重点介绍了AOS TFT用AOS沟道层在材料体系、成膜技术、薄膜的后续处理工艺、材料体系中各元素含量以及掺杂等方面的研究成果,并分析了AOS沟道层对AOS TFT性能的影响以及存在的问题,对AOS TFT的未来发展趋势进行了预测和展望。Thin-film transistor （TFT） has been widely used as the switching or driving component in the active-matrix flat panel displays. The channel layer plays an important part in determining TFT de- vice performance. In recent years, TFT with amorphous oxide semiconductor （AOS） as channel layer has been intensively researched as a promising alternative to the conventional amorphous silicon or low temperature poly-silicon TFT in the next-generation display applications such as large-area, three-dimen- sional, flexible and transparent displays. The research progress on channel layers of amorphous oxide semiconductors thin film transistors are reviewed. Some research results about AOS materials system, preparation technology of AOS thin films, treatment process of AOS thin films, AOS thin films composi- tion and doping elements are mainly introduced. The effects of AOS channel layer on the electrical properties of AOS TFT and the existing problems of the AOS TFT are analyzed. In addition, the prospect of AOS TFT is predicted.

关 键 词：薄膜晶体管(TFT) 非晶氧化物半导体(AOS) 沟道层 成膜技术 薄膜组分 掺杂 

分 类 号：TN304.21[电子电信—物理电子学] TN321.5