氧化镓纳米棒的制备及其结构表征  

PREPARATION AND CHARACTERIZATION OF Ga_2O_3 NANORODS

作　　者：耿树吉 李玉国[1] 孟津[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《山东师范大学学报（自然科学版）》2017年第2期51-54,共4页Journal of Shandong Normal University(Natural Science)

摘　　要：实验利用碳热还原法,以氧化镓粉末为原料,镀金Si(111)片为基底,在1 300℃高温下恒温加热60 min,制备出了氧化镓纳米棒状结构,并通过SEM,TEM,XRD等对样品进行了表征.SEM检测表明实验合成了大量的直径在400-600 nm的纳米棒,并遵循VLS生长机制,同时EDS图谱说明样品很可能是Ga_2O_3,通过XRD检测确定了样品是单斜晶系的β-Ga_2O_3.最后分析了这种纳米结构的可能生长过程.Ga2O3 nanorods were synthesized on gold coated silicon（ 111 ） substrate by carbothermal reduction method at 1 300℃ for 60 min and characterized by Scanning Electron Microscopy （SEM）, transmission electron microscopy （TEM） and X-Ray Diffraction （XRD）. SEM images showed the nanorods were obtained in large-scale according to the VLS growth mechanism and the diameter ranges from 400 nm to 600 nm. In addition, the samples are likely to be Ga2O3 by EDS and identified as monoelinicβ- Ga2O3 by XRD. Finally, a possible growth mecha- nism was proposed and discussed.

关 键 词：碳热还原 纳米棒 生长机制 单斜晶系 

分 类 号：O484.5[理学—固体物理]