高质量类金刚石薄膜的制备与性能分析  

Fabrication and Analysis of High Quality Diamond Like Carbon Film

作　　者：王涛[1] 刘磊[1,2] 陈果[1] 何小珊[1] 张玲[1] 何智兵[1] 易勇[2] 杜凯[1,2] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900 [2]西南科技大学材料科学与工程学院,四川绵阳621010

出　　处：《原子能科学技术》2017年第6期1145-1152,共8页Atomic Energy Science and Technology

基　　金：中国工程物理研究院超精密加工重点实验室基金资助项目(ZD16002)

摘　　要：采用直流/射频耦合磁控溅射法在Si(100)衬底上成功制备出类金刚石(DLC)薄膜。利用Raman光谱仪、X射线光电子能谱仪表征不同射频功率下所制备薄膜的化学结构,讨论射频功率对薄膜化学结构的影响。采用X射线小角反射法表征薄膜的质量密度,利用曲率弯曲法表征薄膜的残余内应力,采用扫描电镜和原子力显微镜表征所制备薄膜的表面形貌与粗糙度。研究表明:薄膜中sp3键的含量随着射频功率的增加而呈现出先增大后减小的趋势,且在射频功率为40 W时达到最大值45.6%。随着射频功率的增加,薄膜的表面粗糙度呈现出先减小后增大的趋势,当射频功率为40 W时薄膜的表面粗糙度最小,为1.6 nm。直流/射频耦合磁控溅射法在不同射频功率下制备出的薄膜,其内应力均低于1.0 GPa,薄膜质量密度的变化范围为2.26~2.44 g/cm^3,有望成功制备出内应力低、密度高的高质量DLC薄膜。Diamond like carbon （DLC） films were deposited on Si（100） substrate by coupling DC/RF magnetron sputtering. The chemical compositions of DLC films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The mass density of DLC films was investigated by X-ray reflectivity. The internal stress of DLC films was measured by substrate curvature method. The surface roughness and surface morphology were characterized by atomic force microscopy and scanning electron microscopy, respectively. It is found that sp3 content in the films first increases then decreases with the RF power increasing, and reaches the maximum value of 45.6% at 40 W RF power. With the RF power increasing, the surface roughness first decreasesthen increases and gains the minimum surface roughness of 1.6 nm at 40 W RF power. The internal stress of DLC films deposited by coupling DC/RF magnetron sputtering is lower than 1.0 GPa, and mass density varies from 2.26 g/cm3 to 2.44 g/cm3. So, this method would be really an effective method to prepare high quality DLC films with low internal stress and high mass density.

关 键 词：直流/射频耦合磁控溅射 类金刚石薄膜 射频功率 质量密度 

分 类 号：TB43[一般工业技术]