Si基(100)取向3C-SiC单晶薄膜生长工艺技术研究  

Research on Growth Process of (100) Oriented 3C-SiC Single Crystal Thin Film on Si Substrate

作　　者：毛开礼[1,2] 王英民[1] 李斌[1] 赵高扬[2] 

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024 [2]西安理工大学材料科学与工程学院,陕西西安710048

出　　处：《电子工艺技术》2017年第3期128-130,151,共4页Electronics Process Technology

基　　金：国家自然科学基金项目(项目编号:61404117);国家高技术研究发展计划863重大专项资助项目(项目编号:2014AA041401)

摘　　要：为了改善3C-SiC单晶薄膜结晶质连SiC单晶薄膜微观结构与碳化工艺是3C-SiC/Si异质外延研究的关键。研究了碳化工艺、3C-SiC薄膜外延生长温度、x(C)/x(Si)气相摩尔比等对于Si基3C-SiC薄膜表面质量和结晶质量的影响,获得(100)单晶Si衬底生长高质量3C-SiC薄膜工艺。通过光学显微镜、XRD射线2θ-ω、XRD摇摆曲线等分析Si基3C-SiC薄膜表面质量和单晶特性。研究表明,在x(C)/x(Si)气相摩尔比为1.6时,采用"两步碳化工艺"在1 385℃生长1 h获得的3C-SiC薄膜为类单晶薄膜,3C-SiC薄膜(200)衍射峰的摇摆曲线半峰宽约为0.19°。It is a challenge to improve crystallization quality of 3C-SiC single crystal films on Sisubstrates. Improving the microstructure and modifying the carbonation process are the key technology. High quality 3C-SiC thin film growing technology on（100） Sisubstrates were obtained by studying the effect of carbonization process, 3C-SiC thin film epitaxial growth temperature, and gas phase C/Simolar ratio on the surface quality and the quality of crystallization, respectively. The surface quality and crystallization characteristics of Sibased 3C-SiC films were analyzed by optical microscope, XRD 2θ-ω curve, and XRD rocking curve. The results showed that the 3C-SiC film grown on（100） Sisubstrate was quasi-crystal film, which was grown at 1 385 ℃ for 1 h by the modified two-step carbonization process. X-ray diffraction rocking curve FWHM of 3C-SiC（200） diffraction peak was about 0.19°.

关 键 词：Si单晶衬底 3C-SiC单晶薄膜 修正的两步碳化工艺 

分 类 号：TN304[电子电信—物理电子学]