基于厚膜集成电路的双面互连电路制作方法研究  

Research of Double-side Interconnect Circuit Chip Fabrication Method on Thick Film Integrated Circuit

作　　者：张英华[1] 束平[1] 王娜[1] 张刚[1] 

机构地区：[1]中国电子科技集团公司第二十九研究所,四川成都610036

出　　处：《电子工艺技术》2017年第3期131-134,共4页Electronics Process Technology

摘　　要：厚膜集成技术经过70多年的发展,已成为集成电路的一个重要组成部分。通过分析现有厚膜加工技术,明确了孔制作技术是厚膜双面互连电路片制作的关键技术。在现有孔加工技术基础上,分析了无掩膜填孔技术和掩膜填孔技术的适用性,并在此基础上增加研磨过程,去除正面多余的填孔浆料,改善了孔的质量,从而改进了厚膜双面互连电路片的工艺过程。还进行了研磨后陶瓷电路片金层金丝、金带焊接拉力测试实验和钯银层可焊性、耐焊性和焊接拉力测试实验,验证了研磨对后道组装没有影响。最后,根据验证的厚膜双面互连电路片制作方法完成了典型厚膜电路片的生产。Thick film integrated technology has become an important part of the integrated circuit after development of seventy years. Through the analysis of existing thick film processing technology, it confirmed that the via fabrication is the key process in the manufacture of thick film double-side interconnection circuit. Analyzed the application of the non-mask and mask via filling technologies, and added the grinding process in order to remove the extra paste of filling via on front face, improved the via quality and the double-side interconnection process. Also, tested the strength of the gold wire and ribbon bonding, and the strength, solderability of Pd Ag layer, it was verified that there was no effects on the assembly after grinding. At last, the typical circuit was manufactured.

关 键 词：厚膜 双面互连 填孔 研磨 

分 类 号：TN44[电子电信—微电子学与固体电子学]