高电源抑制比低温度系数超低功耗基准电压源  

An Ultra-Low Power Voltage Reference with High PSRR and Low Temperature Coefficient

作　　者：周勇[1,2] 胡云斌[2] 胡刚毅[1,3] 沈晓峰[2] 顾宇晴 倪亚波 

机构地区：[1]重庆大学光电工程学院,重庆400044 [2]模拟集成电路重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2017年第3期355-358,共4页Microelectronics

摘　　要：在0.18μm标准CMOS工艺模型下,利用亚阈值及深线性区MOS管的特性,设计了一种新颖的偏置电流产生电路,并采用此电路设计出一种具有高电源抑制比、低温度系数的全MOS型基准电压源。该电压源采用全MOS结构,不使用电阻,功耗超低。电源电压在0.9~3V变化时,该电压源均可正常工作,输出电压约为558mV。1.2V电源电压下,在-55℃~100℃温度范围内,该电压源的温度系数为2.3×10-5/℃,低频电源抑制比为-81dB,总功耗约为127nW。A novel current generator was designed in a 0.18 μm standard CMOS process relying on the properties of sub threshold MOSFET and deep linear-area MOSFET. By adopting this current generator, a low power all MOS voltage reference with high PSRR and low temperature coefficient was designed. This BGR used a structure of all MOS, and did not use resistors, so it had the superiority of ultra-low power consumption. This circuit could steadily work under 0.9-3 V power supply, and the output voltage was about 558 mV. At 1.2 V power supply, the temperature coefficient was 2.3 × 10^-5/℃ at the temperature range from -55 ℃ to 100 ℃, the PSRR at low frequency was -81 dB,and the total power consumption was about 127 nW.

关 键 词：低温度系数 高电源抑制比 全MOS 超低功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]