单源聚合物先驱体法制备SiC基复相陶瓷的研究进展  

Research Progress on SiC-Based Composite Ceramic Prepared Through a Single-Source-Precursor Route

作　　者：杨乐[1,2] 陈晶玲[1] 钟丽娜[1] 雷廷平 余兆菊[2] 

机构地区：[1]华侨大学材料科学与工程学院,厦门361021 [2]厦门大学特种先进材料实验室,厦门361005

出　　处：《中国陶瓷》2017年第6期1-7,共7页China Ceramics

基　　金：福建省自然科学基金(2015J01205);华侨大学2016年实验教学改革与建设课题(66661601)

摘　　要：在碳化硅(SiC)陶瓷中引入异质元素可赋予其更优异的性能,如良好的热稳定性和独特的电磁性能。采用单源聚合物先驱体法制备陶瓷,通过合成不同结构的单源聚合物先驱体,可在原子尺度设计、调控陶瓷的组成和微结构等方面,达到优化陶瓷性能的目的。根据近年来的研究成果,介绍了单源聚合物先驱体制备Si-B-C、Si-M-C(M=Ti,Zr,Hf)和Si-M-C(M=Fe,Ni)复相陶瓷的研究动态,并展望了其今后的发展趋势。The introduction of heterogeneous elements into SiC ceramics can endow the ceramics with more excellent performances, such as high temperature stability and unique electromagnetic properties. When preparing ceramics through a single-source-precursor route, the composition and microstructure of ceramics can be designed and tailored by tuning the architecture of single-source-precursors at the atomic scale for optimizing the ceramic performance. The research trends on Si-B-C, Si-M-C （M = Ti, Zr, Hf） and Si-M-C （M=Fe, Ni） ceramic composites derived from a single-source-precursor route were elaborated according to the research achievements in recent years, meanwhile, its development trend in the future was discussed.

关 键 词：单源聚合物先驱体法 碳化硅 异质元素 复相陶瓷 

分 类 号：TQ174.758.2[化学工程—陶瓷工业]