高功率GaSb基2.6微米InGaAsSb/AlGaAsSbⅠ型量子阱室温工作激光器(英文)  

High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type Ⅰ quantum-wells

作　　者：柴小力 张宇[1,2] 廖永平[1,2] 黄书山 杨成奥 孙姚耀 徐应强[1,2] 牛智川[1,2] 

机构地区：[1]中国科学院半导体研究所超晶格实验室,北京100083 [2]中国科学技术大学量子信息与量子科技前沿协同创新中心,安徽合肥230026

出　　处：《红外与毫米波学报》2017年第3期257-260,共4页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Basic Research Program of China(2014CB643903,2013CB932904);the National Natural Science Foundation of China(61435012,61306088,61274013)

摘　　要：成功制备出2.6μmGaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到更好的光学质量,将量子阱的生长温度优化至500℃,并将量子阱的压应变调节为1.3%.制备了脊宽100μm、腔长1.5mm的激光单管器件.在未镀膜下该激光器实现了最大328mW室温连续工作,阈值电流密度为402A/cm^2,在脉冲工作模式下,功率达到700mW.GaSb-based InGaAsSb/A1GaAsSb type-I quantum-wells （QWs） laser diodes have been successfully fabricated. The wavelength is expanded to 2.6 p,m with high output power. The device structures were grown by molecular beam epitaxy. Under the optimized QWs growth temperature of 500℃, the compressive strain of the QWs are defined to 1.3% for better optical quality. With a ridge width of 100μm and cavity length of 1.5 mm, the maximum output power of single facet without coating has reached up to 328 mW under continuous wave （CW） operation at room temperature and 700 mW under pulse condition. The threshold current density is 402 A/ cm2.

关 键 词：镓锑基 半导体激光器 量子阱 中红外 

分 类 号：O43[机械工程—光学工程]