非对称超结场效应晶体管设计和仿真  

Design and Simulation of Asymmetric SJ-MOSFET

作　　者：张广银[1] 沈千行 喻巧群[1] 卢烁今[1] 朱阳军 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]江苏物联网研究发展中心,江苏无锡214135

出　　处：《微电子学与计算机》2017年第7期18-22,共5页Microelectronics & Computer

基　　金：国家重大科技专项(2013ZX02305-005-002);国家自然科学基金(51490681);省院合作高技术产业化专项资金项目(2016SYHZ0026)

摘　　要：为了克服传统功率MOSFET通态电阻和击穿电压之间的矛盾,引入了超级结(SJ)器件,通过引入横向电场来提高击穿电压.针对工艺中非对称pillar的设计需求,建立了非对称的研究分析模型,通过引入影响设计的非对称因子k,分析了k的物理意义和修正了不同pillar比例下的k值来设计相关参数,推导出超结的设计解析表达式.为了验证设计的准确性,以沟槽栅SJ-MOSFET为器件,进行了仿真验证和比较,理论与仿真结果符合良好,可以用于超结MOSFET的设计指导.In order to overcome the traditional power MOSFET contradiction between on-state resistance and breakdown voltage, the super junction （SJ） device is introduced, so that it improves the breakdown voltage through the transverse electric field. In asymmetric pillar design requirements, establishing the asymmetry analysis model, introducing asymmetric factor k, analyzing the physical meaning of k and modifying the k value for pillar in different proportions, analytical expression of super junction is derived. In order to verify the accuracy of the design, basing on trench gate SJ-MOS device, simulation verification and comparison are carried out. , theoretical and simulation results are in good agreement, the theory can be used as a guide for the design of super junction MOSFET.

关 键 词：SJ-MOSFET非对称 漂移区 横向电场 

分 类 号：TN389[电子电信—物理电子学]