氧氩比和退火温度对AZO薄膜结构与性能的影响  

Influence of the Ratio of Oxygen to Argon and Annealing Temperature on Properties of Al-doped ZnO Films

作　　者：于舸[1] 赵曼[1] 吕爱君[1] YU Ge ZHAO Man LV Aijun(Department o f Mathematics and Physics , Beij ing Institute of Petrochemical Technology, Beijing 102617, China)

机构地区：[1]北京石油化工学院数理系,北京102617

出　　处：《北京石油化工学院学报》2017年第2期1-5,共5页Journal of Beijing Institute of Petrochemical Technology

基　　金：北京自然科学基金(1132010);北京市青年拔尖人才项目(CIT&TCD201304099;CIT&TCD201304102);北京石油化工学院学科带头人计划资助项目(BIPT-BPOAL-2013)

摘　　要：在通氩气和不同比率氧氩混合气体的条件下,利用射频磁控溅射法在玻璃衬底上制备铝(Al)掺杂氧化锌(AZO)薄膜(溅射功率为180W,衬底温度为300℃),并对部分薄膜样品进行400℃或500℃退火处理。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和分光光度计对薄膜的结构、表面形貌和光学性能进行测试研究。结果表明,制备的所有薄膜均呈现(002)晶面择优生长;与氩气溅射相比,当采用氧氩混合气体溅射时,生长的AZO薄膜晶粒尺寸显著增大;退火处理使2类薄膜的表面粗糙度都明显减小,晶粒也有所增大(7%~13%)。其中,在氧氩比为1∶2的混合气体中制备的薄膜,经过500℃退火后,晶粒尺寸最大(39.4nm),薄膜表面更平整致密,在可见光区平均透过率接近最大(89.3%)。Al-doped ZnO （AZO） films were deposited on the ultrasonically cleaned glass substrates by using the radio frequency （RF） magnetron sputtering techniqueat the substrate temperature 300 ℃ and the sputtering power 180 W. The effects of the gas flow ratio of 02 to Ar（GFR） and the annealing on the microstructure and the optical properties of AZO filmswere investigatedvia X-ray diffraction, atomic force microscopy, and visible light spectrophotometer. It is found that the AZO films deposited in the mixed gas of O2 and Ar show much larger erystallite size than those deposited in the pure Ar gas, and the surface roughness of the annealed film samples is lower than that of un-annealed ones. As a result, the optical properties of these AZO films are remarkably improved. The AZO films, which were deposited in the GFR1 ： 2 mixed gas and annealed at 500 ℃, reveal the best comprehensive properties, including thebiggest crystallite size of 39.4 nm, the least roughness of 1.4 nm, and the almost highest visible transmittance of 89. 3%.

关 键 词：AZO薄膜 射频磁控溅射 退火温度 氧氩比 透过率 

分 类 号：O484.4[理学—固体物理] TB383[理学—物理]