螺旋波等离子体合成SiON薄膜及其特性  

Synthesis of SiON films by helicon-wave plasma and their characteristic analysis

作　　者：於俊[1,2] 黄天源[1,2] 季佩宇 金成刚[1,2] 诸葛兰剑[1,3] 吴雪梅[1,2] YU Jun HUANG TianYuan JI PeiYu JIN ChengGang ZHUGE LanJian WU XueMei(College of Physics, Optoelectronics and Energy, Collaborative Innovation Center ofSuzhou Nano Science and Technology, Soochow University Suzhou 215006, China Key Laboratory of Thin Film Materials of Jiangsu Province, Suzhou 215006, China Analysis and Testing Center, Soochow University, Suzhou 215123, China)

机构地区：[1]苏州大学物理与光电能源学部苏州纳米科技协同创新中心,苏州215006 [2]江苏省薄膜材料重点实验室,苏州215006 [3]苏州大学分析测试中心,苏州215123

出　　处：《科学通报》2017年第19期2125-2131,共7页Chinese Science Bulletin

基　　金：国家磁约束聚变项目(2014GB106005;2010GB106000);国家自然科学基金(11175126;11375126;11435009;11505123)资助

摘　　要：采用不同比例的N_2/Ar螺旋波等离子体(HWP),对Si表面进行氮化处理合成SiON薄膜.X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)结果显示,SiON薄膜主要由Si–O–N和Si–N键的两相结构组成.原子力显微镜结果表明氮化层光滑平整,薄膜表面粗糙度小于1.2 nm.水接触角的测量表明经过等离子体处理后样品表面疏水性能提高.放电过程中通过发射光谱采集了不同N_2和Ar流量比放电时的光谱数据,研究了等离子体中的粒子与SiON薄膜结构之间的关系.SiON becomes a kind of new functional material because it has many excellent mechanical and chemical properties such as high hardness, corrosion resistance, oxidization resistance. It is reported that the coating of SiON has many important applications in optical device. For example, it can be used as the protective layer of Edmund optics, touch panel of mobile phone, waveguide tube et al. the Mohs hardness of SiON is about 9H. In addition, the transmittance of the coating is 98% in the visible region. Lately, lots of researchers are interested in the biomedical applications of SiON coatings due to its favourable mechanical properties and the good hemocompatibility of the material. Such as hip implants, it can help patient recover soon because the coating is smooth and the Si–N and Si–O–N chemical bonding are more to the hydrophilicity than Si–O or Si–Si bonds. There is also lots of significant application of SiON films in the field of microelectronics. According to the reports, SiON has the inhibiting effect on hot-carrier injection, impurity diffusion and water vapor permeability. As the dielectric layer, SiON also possesses better electronic mobility and the trap densities of electron. So far, the main synthetic method of SiON is plasma enhanced chemical vapor deposition（PECVD） including inductive coupled plasma source（ICP）, capacitive coupled plasma source（CCP） and microwave electron cyclotron resonance（ECR）. It is found that selectivity of PECVD is bad along with the further study of it. In addition, the SiON dielectric layer contains impurities unavoidably, for example, it will affect the insulation and dielectric properties if adding H atom into the dielectric layer, which can restrict application in large scale integrated circuit. Helicon wave plasma source（HWP） comes to the notice of many researchers because of its high density（about 10^（13） cm^（-3）） at low pressure（0.1~10 Pa）. Chen said that ＂Interest in helicon discharges stems from their unusually high i

关 键 词：螺旋波等离子体 SION 发射光谱 X射线光电子能谱 原子力显微镜 

分 类 号：O484[理学—固体物理] O53[理学—物理]