GaSb和GaInSb晶体制备工艺研究进展  

Research Progress on Preparation Technology of GaSb and GaInSb Crystal

作　　者：王晋伟[1] 刘俊成[1] 

机构地区：[1]天津工业大学材料科学与工程学院,天津300387

出　　处：《激光与光电子学进展》2017年第7期75-84,共10页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(50972085)

摘　　要：介绍了GaSb单晶的制备方法,包括提拉(CZ)法、垂直布里奇曼(VB)法、水平布里奇曼(HB)法、垂直定向凝固(VDS)法和垂直梯度冷凝(VGF)法,总结了它们的优缺点。研究结果表明,VB法、VDS法和VGF法更适合GaSb单晶的生长。进一步介绍了三元合金GaInSb晶体生长工艺的研究进展,微重力环境可以有效抑制晶体中In元素的成分偏析,提高晶体的均匀性。简单介绍了GaSb单晶材料在器件制作方面的应用,展望了GaInSb晶体材料的发展前景。The preparation methods of GaSb single crystal are introduced, which include the Czochralski （CZ） method, the vertical Bridgman （VB） method, the horizontal Bridgman CHB） method, the verzical directional solidification （VDS） method, and the vertical gradient freeze （VGF） method, Their merits and demerits are also summarized. Research results show that the VB, VDS and VGF metes are more suitabh for the growth of GaSh single crystal. Research progress of the ternary alloy GaInSb crystal growth technology is introdueed. The mierogravity environment can effectively suppress the component segregation of In in the crystal and improve the uniformity of the crystal. The applications of GaSb single crystal materials in the fabrication of devices are introduced. and the development of GaInSb materials is prospected.

关 键 词：材料 GASB GalnSb 晶体生长 成分偏析 

分 类 号：TN305.1[电子电信—物理电子学]