SiO_2/SiC界面陷阱对SiC MOSFET开关损耗的影响  

Effect of SiO_2/SiC Interface Traps on the Switching Loss of SiC MOSFET

作　　者：刘航志 周郁明[1] 袁晨[1] 陈涛[1] 

机构地区：[1]安徽工业大学电气与信息工程学院,安徽马鞍山243002

出　　处：《固体电子学研究与进展》2017年第3期159-163,186,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(51177003);安徽高校自然科学研究重点项目(KJ2016A805)

摘　　要：位于SiO_2/SiC界面处密度较高的陷阱,不仅俘获SiC MOSFET沟道中的载流子,而且对沟道中的载流子形成散射、降低载流子的迁移率,因而严重影响了SiC MOSFET的开关特性。目前商业化的半导体器件仿真软件中迁移率模型是基于Si器件开发,不能体现SiO_2/SiC界面处的陷阱对沟道中载流子的散射作用。通过引入能正确反映界面陷阱对载流子作用的迁移率模型,利用半导体器件仿真软件研究了界面陷阱对SiC MOSFET动态特性的影响。结果表明,随着界面陷阱密度的增加,SiC MOSFET开通过程变慢,开通损耗增加,而关断过程加快,关断损耗减小;但是由于沟道载流子数量的减少、导通电阻的增加,总损耗是随着界面陷阱密度的增加而增加。Empty traps at SiO_2/SiC interface can capture the carriers in the channel of SiC MOSFET,and,the occupied traps can scatter the carriers and reduce their mobility,so as to severely affect the switching characteristics of the SiC MOSFET.At present,the commercial semiconductor device simulation software has been developed for Si-based devices,and the effect of interface traps on the channel carrier mobility of the SiC MOSFET can′t be accurately reflected.In this paper,an advanced mobility model was introduced in the commercial semiconductor device simulation software,and the effect of interface traps on the switching characteristics of the SiC MOSFET has been explored.The results show that the high density of interface traps delays the turn-on process of the SiC MOSFET,but accelerates the turn-off process.The channel carriers are reduced with the increase of the interface traps,thus raising the on-state resistance,which leads to the increasing of the total switching loss. LIU Hangzhi ZHOU Yuming YUAN Chen CHEN Tao （School of Electrical Engineering, Anhui University of Technology, Maanshan, Anhui, 243002, CHN）

关 键 词：界面陷阱 碳化硅金属氧化物半导体场效应晶体管 迁移率 损耗 

分 类 号：TN386.1[电子电信—物理电子学] TN432