Ku波段12 W GaAs pHMET功率MMIC  

12 W Ku-band GaAs pHEMT Power MMIC

作　　者：叶显武[1] 

机构地区：[1]海军驻南京地区电子设备军事代表室,南京210039

出　　处：《固体电子学研究与进展》2017年第3期182-186,共5页Research & Progress of SSE

摘　　要：报道了一款采用0.25μm GaAs功率MMIC工艺研制的Ku波段功率放大器芯片。芯片采用三级放大拓扑结构,末级输出匹配电路按照高效率设计,同时优化前后级推动比控制前级电流。级间采用有耗匹配电路设计,提高大信号状态下的稳定性。在16~18GHz频带范围内漏压8.5V、脉宽1μs、占空比40%的工作条件下线性增益大于25dB;饱和输出功率大于12 W,饱和效率大于32%,功率增益大于21dB,功率增益平坦度小于±0.5dB。芯片尺寸为3.5mm×4.6mm。A Ku-band monolithic power amplifier based on 0.25μm GaAs pHEMT process was presented.The amplifier was designed using a three-stage topology,in which high efficiency was realized in the last stage matching circuit and the previous stage current was controlled by optimizing the drive ratio between the front and back stage.The lossy matching circuit was used in inter-stage to improve the stability of large-signal state.From 16 to 18GHz,the amplifier demonstrates a small signal gain of 25 dB,a saturated output power over 12 W,a PAE over 32%,a power gain over 21 dB,and a power gain flatness less than ±0.5dB in the operation condition of 1μs pulse width with 40% duty cycle under 8.5Vdrain bias.The chip size is 3.5mm×4.6mm.

关 键 词：GaAs功率放大器 KU波段 微波单片集成电路 

分 类 号：TN492[电子电信—微电子学与固体电子学]