基于GaN HEMT的高效率Doherty功率放大器设计  

Design of High Efficiency Doherty Power Amplifier Based on GaN HEMT

作　　者：杨章[1] 和新阳[1] 杨飞[1] 

机构地区：[1]中国空间技术研究院西安分院,西安710100

出　　处：《固体电子学研究与进展》2017年第3期187-190,200,共5页Research & Progress of SSE

摘　　要：对影响Doherty功放回退效率的因素进行了分析,从输入功率配置、载波功放与峰值功放栅压以及相位平衡等多重角度进行了仿真,并基于此讨论了DPA(Doherty power amplifier)输出功率回退点的效率空间,从该效率空间出发,可以选择合适的功率配置和栅偏压进行功放的设计。基于GaN HEMT器件对所设计的电路进行了加工、装配和测试。测试结果显示:在2.25GHz时,峰值效率为59%,输出功率为43.7dBm;输出在饱和点回退2dB时的效率为51%。The factors that influence the back-off efficiency of Doherty power amplifier（PA）were analyzed in this paper,and the performance of DPA was simulated,such as different input power division,disparate gate voltages and phase balance.The back-off efficiency space of DPA was discussed based on the above results.Design of DPA could be simplified by the efficiency space.A Doherty PA was fabricated and tested based on GaN HEMT.The test results show that：under a single tone of 2.25 GHz,drain efficiency（DE）reaches 59% with a saturation output power of 43.7dBm,while DE is 51% at 2dB output power back-off from its peak.

关 键 词：功率配置 DOHERTY功放 效率空间 氮化镓 

分 类 号：TN45[电子电信—微电子学与固体电子学]