AlN的厚膜铜金属化及其结合机理  

Surface Metallization of AlN Substrates by Thick Film Method and Its Adhesion Mechanism

作　　者：张鹏飞[1] 傅仁利[2] 陈寰贝[1] 梁秋实[1] 

机构地区：[1]南京电子器件研究所,南京210016 [2]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《固体电子学研究与进展》2017年第3期204-210,共7页Research & Progress of SSE

摘　　要：采用反应厚膜法实现了AlN基板表面的铜金属化,借助SEM、XRD分别对烧结后的厚膜层、还原后的铜金属化层以及界面层的成分和形貌进行了研究;测试了不同烧结温度下金属化基板的敷接强度,并探究了界面层的形成过程以及对敷接强度的影响。结果表明:烧结过后,厚膜层的主要成分是CuO和Cu_2O;经过还原处理后,其表面成分转变为金属Cu;同时,随着烧结温度的上升,烧结后的厚膜层和还原后的金属化层的致密度均呈现先增加后降低的趋势,金属化铜层与基板之间的敷接强度也呈现相同的变化趋势。另外,在金属化铜层和AlN基板之间存在界面化合物,其主要成分是Cu_2O和中间化合物(CuAlO_2和CuAl_2O_4),其中,Cu_2O对敷接强度不利,而尖晶石结构的CuAl_2O_4和细小薄片状的CuAlO_2对敷接强度的有利。Surface metallization of aluminum nitride was performed by a reactively thick？lm method.The morphology and composition of the metalized copper layer on ceramic substrate were investigated via scanning electron microscope（SEM）and X-ray diffraction（XRD）.The interface layer between copper？lm and AlN substrate was examined through SEM,XRD and EDS.In addition,the adhesion strength of bonded samples was evaluated by the tensile test.The results indicate that CuO and Cu_2O are detected in the thick film layer.Afterwards,the copper layer is deposited on the AlN substrate through the reduction treatment.Densification of thick film and copper layer increases until reaching a maximum value,and then decreases with the increasing of sintering temperature.Moreover,the adhesion strength has a similar tendency with sintering temperature.Bonding reaction phases,Cu_2O and intermediate phases（CuAlO_2 and CuAl_2O_4）,are detected at the interface layer.The reaction phases play a key role in increasing bonding strength.Results show that the presence of Cu_2O particles is detrimental to bonding strength.However,spinel CuAl_2O_4 and isolated CuAlO_2 laminates at the interface layer can increase the bonding strength.

关 键 词：ALN基板 厚膜金属化 敷接强度 中间化合物 

分 类 号：TN305[电子电信—物理电子学] TN454