ZnO基异质结构的制备及其光电特性  

Preparation and Photoelectric Properties of ZnO-based Heterostructure

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作  者:王晓慧[1] 林国琛[1] 周啸宇[1] 张立春[1] 赵风周[1] WANG Xiaohui LIN Guochen ZHOU Xiaoyu ZHANG Lichun ZHAO Fengzhou(School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264039, Chin)

机构地区:[1]鲁东大学物理与光电工程学院,山东烟台264039

出  处:《鲁东大学学报(自然科学版)》2017年第3期206-210,288,共6页Journal of Ludong University:Natural Science Edition

基  金:国家自然科学基金(11504155);山东省自然科学基金(ZR2014AM027;ZR2015PA011);山东省高等学校科技计划项目(J14LJ04);鲁东大学科研基金(LY2014006)

摘  要:利用水热法以及脉冲激光沉积(PLD)技术分别在Si(100)和GaAs(100)衬底上制备了沿c轴高度取向的ZnO纳米棒,并对ZnO/p-Si以及ZnO/p-GaAs异质结的发光特性和电学特性进行了测量.通过对比两种衬底上生长的ZnO纳米结构的表面形貌和结晶质量,发现:生长在GaAs(100)衬底上的ZnO纳米棒排列整齐,结构致密,沿c轴择优生长取向较好.ZnO/p-GaAs异质结的光致发光光谱由三个主要的发光峰组成,分别是:380 nm附近的紫外发光峰、450~700 nm的黄绿光发光带以及850 nm左右的GaAs本征发光峰.通过计算得到该光致发光谱的色度坐标,与标准白光的CIE色度坐标(0.333,0.333)接近,这为进一步实现ZnO基固体白光LED发光器件提供了依据.ZnO nanorod arrays which are highly oriented c-axis have been fabricated on Si (100)and GaAs (100) substrate by use of pulsed laser deposition(PLD)-assisted hydrothermal method, and the photometric and electrical characteristics of ZnO/p-Si and ZnO/p-GaAs heterojunction were measured. The surface morphology and crystalline quality of ZnO nanostructures grown on two substrates were compared, and the results were as follows : the ZnO nanorods grown on GaAs(100) substrate had regular arrangement, tight structure and well crystallinity along c-axis. The PL image of ZnO/p-GaAs heterojunction indicated that there are three photoluminescence peaks occurs,including anuhra-violet (UV) emission centered at 380 nm, a broadband yellow-green light from 450 nm to 700 nm, and an emission peak centered 850 nm generated from GaAs substrate. The chromaticity coordinates obtained by the calculations were very close to the (0.333,0.333) of standard white light and this result provided a basis for further realization of ZnO-based solid white LED light-emitting devices.

关 键 词:水热法 ZNO纳米棒 异质结构 光电特性 

分 类 号:O472.3[理学—半导体物理]

 

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