氮气气氛下热处理温度对HfO_2薄膜基底界面结构的影响  

Effects of Annealing Temperature on Film-Substrate Interface Structure in HfO_2 Films on Si Substrate in Nitrogen Atmosphere

作　　者：杨立平[1] 严楷[1,2] 赵园园[2] 曹江利[2] 

机构地区：[1]清华大学化学系,北京100084 [2]北京科技大学新材料技术研究院,北京100083

出　　处：《陶瓷学报》2017年第3期309-314,共6页Journal of Ceramics

基　　金：科技部创新方法工作专项项目(2012IM30500)

摘　　要：通过电子束蒸发镀膜方法在SiO_2(native)/n-Si(100)基底上沉积HfO_2薄膜,采用俄歇电子能谱、原子力显微镜、掠入射X射线衍射以及X射线光电子能谱研究氮气气氛下热处理温度对HfO_2薄膜基底界面结构的影响。结果表明氮气气氛下热处理能够引起HfO_2薄膜基底界面层的宽化,并且随着热处理温度的提高,基底界面层内氧含量以及界面宽度会不断增加。当处理温度升至900℃时,薄膜基底界面宽度相对于沉积态的增加了约20 nm;并且薄膜表面粗糙度由起初的0.184 nm增加至1.047 nm,此时HfO_2薄膜层内的缺陷密度达到最大。薄膜层缺陷密度的增多能够引起基底界面层内氧含量的增加,进而导致了基底界面层化学结构的改变。The HfO2 films were deposited on n-Si （100） substrates with native SiO2 layer by electron beam evaporation. The effects of annealing temperature on the film-substrate interface in HfO2 films in nitrogen atmosphere were studied by using Auger electron spectroscopy （AES）, atomic force microscope （AFM）, grazing incidence X-ray diffraction （GIXRD） and X-ray photoelectron spectroscopy （XPS）. The results showed that the broadening of the film-substrate interface layer could be induced by the annealing temperature in nitrogen atmosphere. With the increase of the annealing temperature, the oxygen content in the film-substrate interface layer increased continuously as well as the interface width. When the temperature went higher （at 900 ~C）, the width at the film-substrate interface increased about 20 nm compared with that of the as-deposited film, and the surface roughness grew to 1.047 nm from the original 0.184 nm. Meanwhile, the defect density in the HfO2 film layer reached the maximum. An increase of oxygen content in the film-substrate interface layer could be induced by the increasing of the defect density, which led to the change in the chemical structure of the interface layer.

关 键 词：HFO2薄膜 基底界面 表面结构 结构缺陷 扩散 

分 类 号：TQ174.75[化学工程—陶瓷工业]