SiC_p/Al复合材料用SiC表面预氧化处理研究  

Study on Pre-oxidation Process of SiC Used in SiC_p/Al Composites

作　　者：崔霞[1,2] 周贤良[1,2] 欧阳德来[1] 宋龙飞[1] 汪松平 CUI Xia ZHOU Xian-liang OUYANG De-lai SONG Long-fei WANG Song-ping(School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China School of Material Science and Engineering, Nanchang Hangkong University, Nanchang 330063, China)

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016 [2]南昌航空大学材料科学与工程学院,南昌330063

出　　处：《南昌航空大学学报（自然科学版）》2017年第2期44-49,共6页Journal of Nanchang Hangkong University(Natural Sciences)

基　　金：国家自然科学基金(51262023);江西省金属材料微结构调控重点实验室开放基金(JW201323001);轻合金加工科学与技术国防重点学科实验室基金(gf201401007)

摘　　要：通过对SiC颗粒的高温氧化和增重实验,研究了SiC高温氧化规律和氧化动力学,探讨了SiC高温氧化后SiC_p/Al复合材料的界面反应。结果表明,SiC颗粒氧化增重随氧化时间增加,先快速增加,后缓慢增加,符合抛物线规律。SiO_2氧化膜厚度随加热温度升高而增加。氧化温度低于900℃时氧化速度较慢,超过1 300℃时氧化膜厚度随氧化温度增加而增加不明显,SiC颗粒表面氧化处理应以氧化温度为1 100℃和氧化时间为10 h为宜。SiC颗粒氧化处理可使SiC_p/Al复合材料界面反应形成Al_2O_3界面相,而有效抑制了界面相Al_4C_3的产生。The oxidation kinetics of SiC was investigated by oxidation process and oxidation mass gain test,and the interface reactions of SiCp/Al composites with pre-oxidated SiC particles were discussed. The results show that the oxidation weight gain increases rapidly,and then increases slowly with increasing oxidation time,which obeys the parabolic law. The oxidation rate of SiC increases with oxidation temperature,while the thickness of the oxide film is not significantly increased as the oxidation temperature is less than900 ℃ or higher than 1 300 ℃. According to the effect of pre-oxidation,the oxidation temperature of 1 100 ℃ and the oxidation time of 10 h are preferable for pre-oxidation of SiC. Formation of the interface phase of Al2O3 in SiCp/Al composites with pre-oxidated SiC particles results in inhibiting the occurrence of the interface phase of Al4C3.

关 键 词：SIC 预氧化 界面 SICP/AL复合材料 

分 类 号：TB333[一般工业技术—材料科学与工程]