半导体中电子和空穴的共有化运动与霍尔电压  

COMMUNIZATION MOVEMENT OF ELECTRONS AND HOLES AND HALL VOLTAGE IN SEMICONDUCTOR

作　　者：罗坚义[1] 李宇东[1] 张园园[1] 林丽娜[1] 黄景诚 

机构地区：[1]五邑大学应用物理与材料学院,广东江门529020

出　　处：《物理与工程》2017年第4期53-56,共4页Physics and Engineering

基　　金：广东省自然科学杰出青年基金(2015A030306031);国家自然科学基金(51402218);广东高校创新团队建设项目(2015KCXTD025);五邑大学青年基金项目(2013zk05;2014td01);五邑大学教研教改项目(YJS-JGXM-14-05;JG2013013)

摘　　要：霍尔效应被应用于测定半导体的载流子种类(电子或空穴)时,空穴的移动在本质上往往被理解为束缚电子的移动,那么同样是电子的移动,却能产生相反的霍尔电压,引发学习者在理解上的困惑。本论文首先阐述了这个问题的由来,并介绍了利用电子有效质量是如何有效解决这个矛盾的观点;最后,笔者从量子力学的角度出发,运用半导体中电子和空穴共有化运动的思想,试图用更加通俗的方式来理解这个问题,以便于学习者能更加深刻、全面地理解霍尔效应和霍尔电压的由来。Hall Effect is usually applied to distinguish the kind of carriers in semiconductor（electrons and holes）,and currently the hole movement could be understood as the boundary electron movement in essence.Spontaneously for learners,aquestion could arise that since hole movement in P-typed semiconductor is belonged to electron movement in essence,but it can induce opposite Hall voltage compared with the case of electron movement in N-typed semiconductor.The arising of this question is firstly introduced in detailed in this paper,and then the concepts of effective mass in solid physics is introduced and applied to solve the question.At last,authors try to answer this question in more comprehensible way by applying the communization movement of electrons and holes in semiconductor,according to the basic ideas of quantum mechanics.The results and discussions in this paper deepen the learners＇ comprehension of the origins of Hall Effect and Hall voltage.

关 键 词：霍尔电压 半导体载流子 有效质量 共有化运动 

分 类 号：G642.423[文化科学—高等教育学] O47-4[文化科学—教育学]