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机构地区:[1]宝鸡文理学院化学化工学院,宝鸡市721013 [2]陕西宝光真空电器股份有限公司,宝鸡市721000
出 处:《玻璃》2017年第7期14-19,共6页Glass
基 金:宝鸡文理学院重点项目;项目编号:ZK11149;博士科研启动费项目;项目编号:ZK2017027资助
摘 要:本实验采用水热法,以ZnSO_47H_2O为和Co(NO_3)_26H_2O为原料,以NaOH作为矿化剂(浓度为2 mol/L、3 mol/L、4 mol/L),在180℃保温24 h条件下,合成Zn_(1-x)Co_xO(x=0、0.05、0.1、0.15)稀磁半导体。通过XRD测试发现,矿化剂浓度对Co掺杂ZnO影响随着Co含量越高,峰值越低。扫描电镜显示:ZnO晶体呈针状,掺杂Co2+后,在长度方向上发生改变,当x=0.05时呈长方形块状,x=0.1时掺杂后的晶体呈块状,x=0.15时晶体以颗粒状的形貌出现,说明Co的掺杂在一定程度上影响了ZnO纳米晶体的生长。The Zn1-xCoxO dilute magnetic semiconductors were prepared by using different contents of Co2^+ (x = 0,0.05,0.1,0.15) at 180 ℃ for 24 h using NaOH (2 mol / L, 3 mol / L, 4 mol / L)as mineralizer.The XRD results show that the doping of Co does not change the crystal structure of the zinc oxide body and the position of the peak appearing, but the cobalt ion is doped to the oxidation of the cobalt oxide by X-ray diffraction (XRD) The higher the Co content is, the lower the peak value is. SEM images show that the doping amount of different Co has a great influence on the morphology of the samples. The shape of the Co is different from that of acicular, flaky and granular. The crystal surface is smooth and has a high crystal quality.
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