脉冲电压对硅/玻璃阳极键合质量影响分析  

Mechanism Responsible for Anodic Bonding of Glass and Silicon by Pulsed Voltage

作　　者：秦会峰[1] 张旭锋[2] 胡利芳[3] 

机构地区：[1]山西机电职业技术学院材料工程系,长治046100 [2]中国兵器工业集团淮海工业集团有限公司,长治046100 [3]太原理工大学材料科学与工程学院,太原030024

出　　处：《真空科学与技术学报》2017年第7期749-752,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：采用脉冲电压对硼硅玻璃与硅进行了阳极键合试验,结果表明采用脉冲电压能有效缩短硅/玻璃阳极键合时间并能适当降低键合温度。通过拉伸试验表明键合强度能达到预定强度要求,通过扫描电镜对键合界面的微观界面进行分析:表明玻璃/硅的键合界面有较明显的中间过渡层生成;通过分析:认为在玻璃/硅进行阳极键合过程中,脉冲电压产生的脉冲电场力对玻璃Na^+耗尽层中的O^(2-)向界面迁移扩散起到了反复驱动的作用,促进了O^(2-)向阴极表面迁移,增加了界面键合效率,缩短了硅/玻璃阳极键合时间,并降低了键合温度,从而促进了过渡层的形成。A novel technique was developed to anodically bond the borosilicate glass and silicon wafer with pulsed voltage. The impact of the bonding conditions,including the frequency,duty cycle and peak/valley voltages of pulsed voltages,on the interfacial microstructures and adhesion was investigated with scanning electron microscopy and conventional mechanical probes to understand the bonding mechanism. The results show that the optimized square pulsessignificantly increased the interfacial adhesion,decreased the bonding time and shortened the bonding temperature,because the pulses induced formation of an oxide transitionlayer at the glass/Si interface. The positive pulsed voltage repeatedly drives O_2-ions,in the Na＋ion depletion layer in glass,to the interface,resulting in quite a few favorable effect,including the increased O_2-mobility,enhanced interfacial adhesion,decreased bonding time,reduced bonding temperature,and importantly,formation of an interfacial transition layer.

关 键 词：阳极键合 硼硅玻璃 硅 脉冲电压 

分 类 号：TG453[金属学及工艺—焊接]