氩氧比对磁控溅射梯度AZO薄膜光电性能的影响  

Influence of Ar to O_2 Ratio on the Photoelectric Performance of Gradient AZO Thin Film Prepared by Magnetron Sputtering

作　　者：赵斌[1,2] 唐立丹[1] 王冰[1] 冯佳恒 

机构地区：[1]辽宁工业大学材料科学与工程学院,辽宁锦州121000 [2]中国科学院嘉兴微电子仪器与设备工程中心,浙江嘉兴314000

出　　处：《压电与声光》2017年第4期565-568,572,共5页Piezoelectrics & Acoustooptics

基　　金：国家教育部重点基金资助项目(2012031);辽宁省自然科学基金资助项目(2015020215);辽宁省高校优秀人才计划基金资助项目(LJQ2015050);辽宁省教育厅一般研究基金资助项目(L2015236);辽宁省高等学校创新团队基金资助项目(LT2013014)

摘　　要：采用磁控溅射法在单晶硅和石英玻璃衬底上制备梯度铝掺杂的氧化锌(AZO)薄膜。利用X线衍射(XRD)、霍尔效应测试和紫外可见光分度计等研究了不同氩氧比(体积比)对梯度AZO薄膜结构和光电性能的影响。结果表明,氩氧比可以改善薄膜的结晶质量,且对电学性能的影响较大。随着氩氧比的增加,晶粒尺寸减小,结晶度稍有下降,薄膜的电阻率却显著降低,当氩氧比为1∶0时,薄膜具有最低的电阻率为6.85×10^(-4)Ω·cm。此外,所有的梯度AZO薄膜在可见光区的透过率均达到80%。The gradient Al-doped ZnO（AZO）thin films were prepared on the single crystalline silicon and quartz glass substrates by the magnetron sputtering method.The effects of Ar to O2 ratio on the structure and photoelectric performance of the gradient AZO films were investigated by X-ray diffraction（XRD）,Hall-effect measurements and UV-visible spectrophotometer.The results show that the Ar to O2 ratio can improve the crystal quality of gradient AZO films and has a significant impact on the electrical property.With the increase of the Ar to O2 ratio,the crystallite size decreased,the crystallinity slightly decreased and the resistivity of AZO thin films deteriorates significantly.The gradient AZO films had the lowest resistivity of 6.85×10-4Ω·cm when the Ar to O2 ratio was 1∶0.In addition,all gradient AZO thin films had the transmittance of above 80%in the visible wavelength region.

关 键 词：梯度铝掺杂的氧化锌(AZO)薄膜 磁控溅射 氩氧比 电阻率 透过率 

分 类 号：TN304.2[电子电信—物理电子学]