(Pb,Sr)Nb_2O_6-NaNbO_3薄膜的制备与介电性能研究  

Preparation and Dielectric Properties of (Pb,Sr) Nb_2O_6-NaNbO_3 Thin Film

作　　者：谭飞虎 赵鸿滨[1,2] 于军洋 张庆猛[1,2] 魏峰[1,2] 杜军[1,2] Tan Feihu Zhao Hongbin Yu Junyang Zhang Qingmeng Wei Feng Du Jun(Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beifing 100088, China State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China)

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088 [2]北京有色金属研究总院智能传感功能材料国家重点实验室,北京100088

出　　处：《稀有金属》2017年第7期826-830,共5页Chinese Journal of Rare Metals

基　　金：国家自然科学基金项目(51107005;51477012)资助

摘　　要：采用脉冲激光技术(PLD)在p+-Si上沉积了(Pb,Sr)Nb2O6-Na Nb O3介质薄膜,介质薄膜在氧化气氛下进行不同温度的热处理,进行光刻图形化、磁控溅射沉积电极之后,形成Al/p+-Si/(Pb,Sr)Nb2O6-Na Nb O3/Au结构的MIM(金属-绝缘体-金属)电容器。通过X射线衍射(XRD)、原子力显微镜(AFM)和高分辨透射电子显微镜(HRTEM)对介质薄膜的微观形貌及结构进行分析。通过测试不同温度热处理后薄膜电容器的I-V和C-V电学特性,研究了不同温度热处理对薄膜电容器漏电流密度、电容、介电损耗及物相的影响,并对电容器电容和损耗的偏压特性进行了分析,结果表明,800℃热处理能显著提高薄膜的介电常数并降低漏电流密度。在偏压为-1 V,频率为1 k Hz的测试环境下,其介电常数为33,漏电流密度约为4.104×10-9A·cm-2,满足微电子领域内对漏电流小于1×10-8A·cm-2的要求;对薄膜电容器特性曲线拟合后得到其二次项电压系数为188,符合国际半导体技术蓝图(ITRS)对未来MIM电容提出的要求,具有良好的应用前景,是制备无机薄膜电容器理想的介质材料。（Pb, Sr）Nb206-NaNbO3 dielectric thin films were fabricated by pulsed laser deposition （PLD） technology on p ＋-Si, The dielectric film was annealed at different temperatures in oxygen atmosphere. Metal insulator metal（M1M） capacitorwith A1/p ＋ -Si/（ Pb, Sr） Nb2O6-NaNbO3/Au structure was fabricated after patterning the film in photolithography and preparing electrodes by magnetron sputtering. The microscopic surface topography and surface roughness were studied by X-ray diffraction（XRD） , atomic force microsco- py（AFM） and high resolution transmission electron microscope （HRTEM）. The 1-V electrical characteristics and C-V characteristics of MIM capacitor were studied, respectively, the effects of annealing temperature on leakage current density, capacitance, dielectric loss and phase of the MIM capacitor were investigated, furthermore, the bias characteristics of capacitance and dielectric loss were studied, and dielectric constant increased and leakage current density decreased when the film was annealed at 800 . When it was calculated at - 1 V in 1 kHz, the dielectric constant was 33 and the leakage current density was about 4. 104 × 10^-9A·cm^-2, which met the re- quirements for the leakage current density of less than 1 × 10^ -8 A·cm 2 in the field of microelectronics. The quadratic voltage coeffi- cientwas 188 after fitting curve, which met the requirements for the future MIM capacitor released by international technology roadmap for semiconductors （ITRS）, and （Pb, Sr）Nb2 O6-NaNbO3 was desirable dielectric material forinorganic thin film capacitor.

关 键 词：(Pb Sr)Nb2O6-NaNbO3薄膜 脉冲激光沉积法 微晶玻璃薄膜 MIM 介电性能 

分 类 号：TM536[电气工程—电器]