50～75MHz 1200W脉冲功率LDMOS器件的研制  

Research and Fabrication of 50-75 MHz 1 200 W Pulse Power LDMOS

作　　者：张晓帆[1] 郎秀兰[1] 李亮[1] 李晓东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2017年第8期603-607,共5页Semiconductor Technology

摘　　要：分析了工作于甚高频(VHF)频段的千瓦级横向扩散金属氧化物半导体(LDMOS)器件的输出功率、漏极效率及功率增益等关键参数在设计时应考虑的因素,在此基础上,采用0.8μm LDMOS工艺成功研制了一款工作于VHF频段的脉冲大功率硅LDMOS场效应晶体管(LDMOSFET)。设计了用于50~75 MHz频带的宽带匹配电路。研制的器件击穿电压为130 V。在工作电压为50 V,工作脉宽为1 ms,占空比为30%的工作条件下测试得到,器件的带内输出功率大于1 200 W,功率增益大于20 dB,漏极效率大于65%,抗驻波比大于10∶1。The factors that should be considered in the design of some key parameters were analyzed,such as the output power,the drain efficiency and the power gain of kilowatt level laterally diffused metal oxide semiconductor（ LDMOS） devices operating at very high frequency（ VHF）. Based on this,a pulse high power Si LDMOS field effect transistor（ LDMOSFET） operating at VHF was successfully researched and fabricated by adopting 0. 8 μm LDMOS process. A wide band matching circuit used for 50-75 MHz frequency band was designed. The breakdown voltage of the fabricated device is 130 V.Under the conditions of the working voltage of 50 V,the working pulse width of 1 ms and the duty cycle of 30%,the device can achieve an output power of more than 1 200 W with power gain of more than 20 dB and a drain efficiency of more than 65% in the frequency range of 50-70 MHz. The device can endure the VSWR of over 10 ∶ 1.

关 键 词：硅 横向扩散金属氧化物半导体(LDMOS) 脉冲 大功率 宽带 千瓦级 

分 类 号：TN386.1[电子电信—物理电子学]